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LX5530LQ

Description
RF/Microwave Amplifier
CategoryWireless rf/communication    Radio frequency and microwave   
File Size885KB,11 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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LX5530LQ Overview

RF/Microwave Amplifier

LX5530LQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
Reach Compliance Codecompliant
Characteristic impedance50 Ω
structureCOMPONENT
Gain28 dB
Maximum input power (CW)15 dBm
Maximum operating frequency6000 MHz
Minimum operating frequency4500 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Base Number Matches1
LX5530
InGaP HBT 4.5 – 6.0GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Broadband 4.9-5.9GHz
Operation
Advanced InGaP HBT
Single-Polarity 3-5V Supply
Power Gain up to ~ 33dB for
Vc=5V, Icq=250mA
Power Gain > ~28dB across 4.9-
5.85GHz
OFDM Mask Compliance Power
Pout ~ +25dBm over 4.9-
5.85GHz (ACPR ~ -50dBc @
±30MHz Offset)
Pout up to +23dBm with EVM
~3% (Vc=5V)
EVM < ~2.5% for
Pout=+21dBm across 4.9-
5.85GHz (Vc=5V)
EVM < ~2.5% for
Pout=+19dBm across 4.9-
5.85GHz (Vc=4V)
Total Current ~250mA for Pout =
+20dBm, Duty Cycle=99%
(Vc=4V)
Complete On-Chip Input Match
Simple Output Match for Optimal
Broadband EVM
On-Chip RF Decoupling
Temperature-Compensated On-
Chip Output Power Detector
with Wide Dynamic Range
Small Footprint: 3mmx3mm
Low Profile: 0.9mm
APPLICATIONS
W W W.
Microsemi
.CO
M
LX5530 is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.9
GHz frequency range. The PA is
implemented
as
a
three-stage
monolithic microwave integrated
circuit (MMIC) with active bias, on-
chip input matching and output pre-
matching. The device is manufactured
with an InGaP/GaAs Heterojunction
Bipolar Transistor (HBT) IC process
(MOCVD). It operates with a single
positive voltage supply of 3-5V, with
high power gain of up to 33dB. When
operated at 5V supply voltage, it
provides up to +25dBm linear output
power for 802.11a OFDM spectrum
mask compliance, and low EVM of
3% for up to +23dBm output power in
the 4.9-5.9GHz band.
LX5530 also features an on-chip
power detector at the output port of the
PA to help reduce BOM cost and PCB
space for implementation of power
control in a typical wireless system. The
power detector is integrated with a
temperature-compensated bias network
and provides very stable response
across a wide range of output power
levels, over temperature extremes from
-40 to +85°C.
LX5530 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability makes
LX5530 an ideal solution for
broadband, high-gain power amplifier
requirements for IEEE 802.11a, and
Hiperlan2 portable WLAN, as well as
the
emerging
802.16
WiMAX
applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
BLOCK DIAGRAM
Vc
RF
Input
Active Bias Network
Vref
RF
Output
Det
FCC U-NII Wireless
IEEE 802.11a
HiperLAN2
5GHz Cordless Phone
IEEE 802.16 WiMAX
3X3MM MLP PACKAGE
PACKAGE ORDER INFO
MSC
5530
YNNN
(YNNN : Trace code)
LQ
Plastic MLPQ
16 pin
RoHS Compliant / Pb-free
LX5530
LX5530
LX5530LQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5530LQ-TR)
Copyright
©
2006
Rev. 1.3, 2019-06-26
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1

LX5530LQ Related Products

LX5530LQ LX5530LQ-TR
Description RF/Microwave Amplifier RF/Microwave Amplifier
Is it Rohs certified? conform to conform to
Maker Microchip Microchip
Reach Compliance Code compliant compliant
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 28 dB 28 dB
Maximum input power (CW) 15 dBm 15 dBm
Maximum operating frequency 6000 MHz 6000 MHz
Minimum operating frequency 4500 MHz 4500 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
RF/Microwave Device Types WIDE BAND LOW POWER WIDE BAND LOW POWER
Base Number Matches 1 1
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