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LX5551LQ

Description
Narrow Band Low Power Amplifier
CategoryWireless rf/communication    Radio frequency and microwave   
File Size502KB,9 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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LX5551LQ Overview

Narrow Band Low Power Amplifier

LX5551LQ Parametric

Parameter NameAttribute value
MakerMicrochip
Reach Compliance Codecompliant
Characteristic impedance50 Ω
structureCOMPONENT
Gain27 dB
Maximum input power (CW)10 dBm
Maximum operating frequency2500 MHz
Minimum operating frequency2400 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesNARROW BAND LOW POWER
Base Number Matches1
LX5551
2.4-2.5 GHz Front-End Module with Internally
Matched Power Amplifier & SPDT for 11b/g/n
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
LX5551 is a high-performance
WLAN front-end module (FEM) for
802.11b/g/n and other applications in
the 2.4-2.5GHz frequency range.
LX5551 integrates an advanced
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) power amplifier with
both input/output impedance matching,
and an InGaAs pseudomorphic HEMT
(pHEMT) switch, into a single 3x3mm
package.
The Tx path of LX5551 features a
two-stage
monolithic
microwave
integrated circuit (MMIC) power
amplifier with active bias circuitry, and
50
input/output matching inside the
package. With 3.3V supply voltage and
90mA nominal bias current, the Tx
path provides 27dB gain and +18dBm
linear output power, with extremely low
total EVM (<3%) for 64QAM/54Mbps
OFDM. Both gain and power are
readily measured at antenna port, with
switch insertion loss included.
The Rx path of LX5551 includes a
low-cost SPDT switch with excellent
insertion loss and isolation. It features a
very low Tx-to-Rx port leakage in
receive mode.
LX5551 is available in a 16-pin,
3x3mm micro-lead package (MLPQ-
16L). With its best-class performance
and compact footprint, LX5551 offers an
ideal front-end solution for the ever
demanding design requirements of
today’s WLAN systems,
including
802.11b/g and the latest 11n MIMO
implementation.
KEY FEATURES
W W W.
Microsemi
.CO
M
2.4-2.5GHz 11b/g/n Front-End
Solution in a Single 3x3mm
MLP Package
All RF Ports Matched to 50
Single-Polarity 3.3V Supply
Tx Path Power Gain ~ 27dB
Rx Path Loss ~ 0.6dB
Pout ~ +18dBm at Antenna* for
EVM = 3%
Total Current ~140mA for
+18dBm with 90% Duty Cycle
Pout > +22dBm for 11b 1Mbps
DSSS Mask Compliance
Small Footprint: 3x3mm
2
Low Profile: 0.9mm
RoHS Compliant & Pb-Free
* Including SPDT switch loss
APPLICATIONS
IEEE 802.11b/g
IEEE 802.11n MIMO
BLOCK DIAGRAM
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
Vref Vc
Ctl1 Ctl2
TxIn
Det
RxOut
Internal
OMN*
Antenna
*OMN: Output Matching Network
LX5551
LX5551
Copyright
©
2008
Rev. 1.1, 2019-06-24
Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1

LX5551LQ Related Products

LX5551LQ LX5551LQ-TR
Description Narrow Band Low Power Amplifier Narrow Band Low Power Amplifier
Maker Microchip Microchip
Reach Compliance Code compliant compliant
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 27 dB 27 dB
Maximum input power (CW) 10 dBm 10 dBm
Maximum operating frequency 2500 MHz 2500 MHz
Minimum operating frequency 2400 MHz 2400 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
RF/Microwave Device Types NARROW BAND LOW POWER NARROW BAND LOW POWER
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