Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 9.5 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (ID) | 14 A |
| Maximum drain-source on-resistance | 0.12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 42 W |
| Maximum pulsed drain current (IDM) | 56 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 63 ns |
| Maximum opening time (tons) | 96 ns |
| Base Number Matches | 1 |
| IRFR025-T1 | IRFR024-T1 | IRFR020-T1 | IRFR022-T1 | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 9.5 mJ | 9.5 mJ | 9.5 mJ | 9.5 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V | 60 V | 50 V | 50 V |
| Maximum drain current (ID) | 14 A | 15 A | 15 A | 14 A |
| Maximum drain-source on-resistance | 0.12 Ω | 0.1 Ω | 0.1 Ω | 0.12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 42 W | 42 W | 42 W | 42 W |
| Maximum pulsed drain current (IDM) | 56 A | 60 A | 60 A | 56 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 63 ns | 63 ns | 63 ns | 63 ns |
| Maximum opening time (tons) | 96 ns | 96 ns | 96 ns | 96 ns |
| Base Number Matches | 1 | 1 | 1 | 1 |
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