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SM532013091X4S8

Description
EDO DRAM Module, 1MX32, 80ns, CMOS, SIMM-72
Categorystorage    storage   
File Size178KB,24 Pages
ManufacturerSMART Modular Technology Inc
Download Datasheet Parametric View All

SM532013091X4S8 Overview

EDO DRAM Module, 1MX32, 80ns, CMOS, SIMM-72

SM532013091X4S8 Parametric

Parameter NameAttribute value
MakerSMART Modular Technology Inc
Parts packaging codeSIMM
package instruction,
Contacts72
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time80 ns
Other featuresCAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH
JESD-30 codeR-XSMA-N72
memory density33554432 bit
Memory IC TypeEDO DRAM MODULE
memory width32
Number of functions1
Number of ports1
Number of terminals72
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX32
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationSINGLE
Base Number Matches1
SMART
Features
®
SM5320130UUXUUU
November 19, 1996
Modular Technologies
4MByte (1M x 32) DRAM Module - 1Mx16 based
72-pin SIMM
Part Numbers
SM53201300UXUUU
SM53201301UXUUU
SM53201308UXUUU
SM53201309UXUUU
Standard
:
JEDEC (5.0V FPM only)
Configuration
:
Non-parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
1K/4K
Device Physicals
:
400mil SOJ/TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
4.250" x 0.850"(SOJ)/1.000”(TSOP)
No. of sides
:
Single-sided
Mating Connector (Examples)
Horizontal
:
AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
:
AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
:
AMP-822110-3 (Tin) / 822097-3 (Gold)
:
:
:
:
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5320140U1XUUU
:
1Mx32,
1Mx4 based.
Functional Diagram
RAS0#
CAS0#
CAS1#
1Mx16
DRAM
1Mx16
DRAM
RAS2#
CAS2#
CAS3#
DQ0~DQ15
DQ16~DQ31
DQ0~DQ31
Notes : 1. A0~A11 to all DRAMs (A10 & A11 are NC for 1K refresh module).
2. WE# to all DRAMs.
3. OE# of all DRAMs is grounded.
V
CC
V
SS
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
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