BUK7518-30127 datasheet, PDF - EEWORLD Datasheet

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BUK7518-30127: DescriptionTRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size270KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK7518-30127 Overview

TRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

BUK7518-30127 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)	80 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	55 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	220 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUK7518-30127 Related Products

	BUK7518-30127	BUK7518-30,127	BUK7518-30
Description	TRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power	55A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	TRANSISTOR 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Maker	NXP	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	ESD PROTECTION	ESD PROTECTION	ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)	80 mJ	80 mJ	80 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V
Maximum drain current (ID)	55 A	55 A	55 A
Maximum drain-source on-resistance	0.018 Ω	0.018 Ω	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	220 A	220 A	220 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum operating temperature	175 °C	175 °C	-
Base Number Matches	1	1	-

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