M463S0924DT1-C1H datasheet, PDF

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M463S0924DT1-C1H: DescriptionSynchronous DRAM Module, 8MX64, 6ns, CMOS, MICRO, SODIMM-144; Categorystorage storage; File Size164KB，13 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M463S0924DT1-C1H Overview

Synchronous DRAM Module, 8MX64, 6ns, CMOS, MICRO, SODIMM-144

M463S0924DT1-C1H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	MODULE
package instruction	DIMM, DIMM144,20
Contacts	144
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	144
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,20
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	29.9974 mm
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	0.76 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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M463S0924DT1

PC133/PC100

µSODIMM

8Mx64 SDRAM

µSODIMM

Revision 0.4

Sept. 2001

Rev. 0.4 Sept. 2001

M463S0924DT1-C1H Related Products

	M463S0924DT1-C1H	M463S0924DT1-L1L	M463S0924DT1-C7A	M463S0924DT1-L7C	M463S0924DT1-L1H	M463S0924DT1-C1L	M463S0924DT1-L7A	M463S0924DT1-C7C
Description	Synchronous DRAM Module, 8MX64, 6ns, CMOS, MICRO, SODIMM-144	Synchronous DRAM Module, 8MX64, 6ns, CMOS, MICRO, SODIMM-144	Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, MICRO, SODIMM-144	Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, MICRO, SODIMM-144	Synchronous DRAM Module, 8MX64, 6ns, CMOS, MICRO, SODIMM-144	Synchronous DRAM Module, 8MX64, 6ns, CMOS, MICRO, SODIMM-144	Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, MICRO, SODIMM-144	Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, MICRO, SODIMM-144
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM144,20	DIMM, DIMM144,20	DIMM, DIMM144,20	DIMM, DIMM144,20	DIMM, DIMM144,20	DIMM, DIMM144,20	DIMM, DIMM144,20	DIMM, DIMM144,20
Contacts	144	144	144	144	144	144	144	144
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	6 ns	6 ns	5.4 ns	5.4 ns	6 ns	6 ns	5.4 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz	133 MHz	133 MHz	100 MHz	100 MHz	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64	64	64	64	64
Humidity sensitivity level	1	1	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	144	144	144	144	144	144	144	144
word count	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	8MX64	8MX64	8MX64	8MX64	8MX64	8MX64	8MX64	8MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,20	DIMM144,20	DIMM144,20	DIMM144,20	DIMM144,20	DIMM144,20	DIMM144,20	DIMM144,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225	225	225
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096	4096	4096
Maximum seat height	29.9974 mm	29.9974 mm	29.9974 mm	29.9974 mm	29.9974 mm	29.9974 mm	29.9974 mm	29.9974 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES
Maximum standby current	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A
Maximum slew rate	0.76 mA	0.76 mA	0.8 mA	0.88 mA	0.76 mA	0.76 mA	0.8 mA	0.88 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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