Fast Page DRAM Module, 256KX9, 100ns, CMOS
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SK Hynix |
| package instruction | , SIP30,.2 |
| Reach Compliance Code | compliant |
| Maximum access time | 100 ns |
| I/O type | COMMON |
| JESD-609 code | e0 |
| memory density | 2359296 bit |
| Memory IC Type | FAST PAGE DRAM MODULE |
| memory width | 9 |
| Number of terminals | 30 |
| word count | 262144 words |
| character code | 256000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 256KX9 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| Encapsulate equivalent code | SIP30,.2 |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 512 |
| Maximum seat height | 16.51 mm |
| Maximum standby current | 0.009 A |
| Maximum slew rate | 0.45 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal pitch | 2.54 mm |
| Terminal location | SINGLE |
| Base Number Matches | 1 |
| HYM5C9256P-10 | HYM5C9256P-12 | HYM5C9256P-70 | HYM5C9256P-80 | |
|---|---|---|---|---|
| Description | Fast Page DRAM Module, 256KX9, 100ns, CMOS | Fast Page DRAM Module, 256KX9, 120ns, CMOS | Fast Page DRAM Module, 256KX9, 70ns, CMOS | Fast Page DRAM Module, 256KX9, 80ns, CMOS |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| package instruction | , SIP30,.2 | , SIP30,.2 | , SIP30,.2 | , SIP30,.2 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| Maximum access time | 100 ns | 120 ns | 70 ns | 80 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON |
| JESD-609 code | e0 | e0 | e0 | e0 |
| memory density | 2359296 bit | 2359296 bit | 2359296 bit | 2359296 bit |
| Memory IC Type | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE |
| memory width | 9 | 9 | 9 | 9 |
| Number of terminals | 30 | 30 | 30 | 30 |
| word count | 262144 words | 262144 words | 262144 words | 262144 words |
| character code | 256000 | 256000 | 256000 | 256000 |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 256KX9 | 256KX9 | 256KX9 | 256KX9 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Encapsulate equivalent code | SIP30,.2 | SIP30,.2 | SIP30,.2 | SIP30,.2 |
| power supply | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 512 | 512 | 512 | 512 |
| Maximum seat height | 16.51 mm | 16.51 mm | 16.51 mm | 16.51 mm |
| Maximum standby current | 0.009 A | 0.009 A | 0.009 A | 0.009 A |
| Maximum slew rate | 0.45 mA | 0.405 mA | 0.63 mA | 0.54 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Base Number Matches | 1 | 1 | 1 | - |
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