PDM41258LA12DI datasheet, PDF - EEWORLD Datasheet

PDM41258LA12DI: DescriptionStandard SRAM, 64KX4, 12ns, CMOS, CDIP24; Categorystorage storage; File Size341KB，8 Pages; ManufacturerParadigm Technology Inc

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PDM41258LA12DI Overview

Standard SRAM, 64KX4, 12ns, CMOS, CDIP24

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Paradigm Technology Inc
package instruction	DIP, DIP24,.3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	R-GDIP-T24
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	24
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64KX4
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0005 A
Minimum standby current	2 V
Maximum slew rate	0.17 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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