Bulletin I27136 rev. E 10/02
IRKU/V105 SERIES
THYRISTOR/ THYRISTOR
ADD-A-pak
TM
GEN V Power Modules
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
105 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior me-
chanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of sur-
face roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-
out: they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, temperature and motor
speed control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
I
T(AV)
@ 85°C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
STG
T
J
IRKU/V105
105
165
1785
1870
15.91
14.52
159.1
400 to 1600
- 40 to 125
- 40 to130
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
C
C
o
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IRKU/V105 Series
Bulletin I27136 rev. E 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
IRKU/V105
08
12
16
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
V
V
V
400
800
1200
1600
500
900
1300
1700
400
800
1200
1600
I
RRM
I
DRM
130°C
mA
20
On-state Conduction
Parameters
I
T(AV)
Max. average on-state
current
I
T(RMS
)
Max. RMS on-state
current.
I
TSM
@ T
C
Max. peak, one cycle
non-repetitive on-state
current
IRKU/V105
105
165
77
1785
1870
1500
1570
2000
2100
Units
Conditions
180
o
conduction, half sine wave,
A
°C
T
C
= 85
o
C
DC
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
No voltage
reapplied
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
No voltage
reapplied
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
Initial T
J
= T
J
max.
Sinusoidal
half wave,
Initial T
J
= T
J
max.
A
I t
2
Max. I t for fusing
2
15.91
14.52
11.25
10.27
20.00
18.30
KA s
2
I
√t
2
Max. I
√t
for fusing (1)
2
159.1
0.80
0.85
2.37
2.25
1.64
K A
√s
2
t= 0.1 to 10ms, no voltage reappl., T
J
=T
J
max.
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= 25
o
C, from 0.67 V
DRM
,
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25°C
V
T(TO)
Max. value of threshold
voltage (2)
r
t
V
TM
di/dt
Max. value of on-state
slope resistance (2)
Max. peak on-state
voltage
Max. non-repetitive rate
of rise of turned on
current
I
H
I
L
Max. holding current
Max. latching current
V
mΩ
V
150
200
A/µs
I
TM
=π x I
T(AV)
,
I = 500mA,
g
t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
mA
400
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V,resistive load
(1) I
2
t for time t = I
2
√t
x
√t
.
x
x
(3) 16.7%
x
π
x I
AV
< I <
π
x I
AV
(2) Average power =
V
T(TO)
x I
T(AV)
+
r
t
x
(
I
T(RMS)
)
2
(4)
I >
π
x I
AV
2
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IRKU/V105 Series
Bulletin I27136 rev. E 10/02
Triggering
Parameters
P
GM
I
GM
V
GT
Max. peak gate power
IRK.U/V105
12
3
3
10
4.0
2.5
1.7
270
150
80
0.25
6
Units
W
A
Conditions
P
G(AV)
Max. average gate power
Max. peak gate current
-V
GM
Max. peak negative gate voltage
Max. gate voltage
required to trigger
I
GT
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
mA
V
GD
V
mA
Blocking
Parameters
I
RRM
I
DRM
V
INS
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
RMS isolation voltage
2500 (1 min)
V
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
500
V/µs
shorted
T
J
= 130
o
C, linear to 0.67 V
DRM
,
gate open circuit
50 Hz, circuit to base, all terminals
20
mA
T
J
= 130
o
C, gate open circuit
IRKU/V 105
Units
Conditions
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU105/16AS90.
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
Junction operating temperature
range
Storage temperature range
IRKU/V105
- 40 to 130
- 40 to 125
0.135
Units
Conditions
°C
Per module, DC operation
K/W
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
R
thJC
Max. internal thermal resistance,
junction to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
0.1
5
3
110 (4)
TO-240AA
Nm
g (oz)
JEDEC
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
180
o
IRKU/V105
0.04
Sine half wave conduction
120
o
0.05
90
o
0.06
60
o
0.08
30
o
0.12
180
o
0.03
Rect. wave conduction
120
o
0.05
90
o
0.06
60
o
0.08
30
o
0.12
Units
°C/W
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IRKU/V105 Series
Bulletin I27136 rev. E 10/02
Ordering Information Table
Device Code
IRK.106 types
With no auxiliary cathode
IRK
1
1
2
3
4
5
6
-
-
-
-
-
-
Module type
U
2
105
3
/
16
4
A
5
S90
6
Circuit configuration (See Circuit Configuration table below)
Current code
* *
Voltage code (See Voltage Ratings table)
A : Gen V
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
e.g. : IRKU106/16A etc.
* *
Available with no auxiliary cathode.
To specify change:
105 to 106
Outline Table
Dimensions are in millimeters and [inches]
IRKU
(1)
+
IRKV
(1)
-
(2)
-
+
(2)
-
(3)
G1
K1
(4) (5)
K2
G2
(7) (6)
G1 K1
+
(3)
K2 G2
(4) (5)
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRKU/V105 Series
Bulletin I27136 rev. E 10/02
Maximum Allowable Case Temperature (°C)
IRK.105.. Series
R
thJC
(DC) = 0.27 K/W
Maximum Allowable Case Temperature (°C)
130
120
110
Conduction Angle
130
120
110
IRK.105.. Series
R
(DC) = 0.27 K/W
thJC
Conduction Period
100
90
80
70
100
90
80
70
30°
60°
30°
90°
120°
180°
60°
90°
120°
180°
DC
0
20
40
60
80
100
120
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
160
140
120
100
80
60
40
20
0
0
20
40
60
200
180
160
140
120
Fig. 2 - Current Ratings Characteristics
180°
120°
90°
60°
30°
RMS Limit
Maximum Average On-state Power Loss (W)
DC
180°
120°
90°
60°
30°
100 RMS Limit
80
60
40
20
0
0
20
40
60
Conduction Period
Conduction Angle
IRK.105.. Series
Per Junction
T
J
= 130°C
80
100
120
IRK.105.. Series
Per Junction
T
J
= 130°C
80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
1500
1400
1300
1200
1100
1000
900
800
700
1
Peak Half Sine Wave On-state Current (A)
1600
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1800
1600
1400
1200
1000
800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 130°C
No Voltage Reapplied
Rated V
RRM
Reapplied
IRK.105.. Series
Per Junction
10
100
IRK.105.. Series
Per Junction
0.1
Pulse Train Duration (s)
1
600
0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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