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LM2864-300

Description
EEPROM, 8KX8, 300ns, Parallel, NMOS, CQCC32
Categorystorage    storage   
File Size205KB,6 Pages
ManufacturerLSC/CSI
Websitehttps://lsicsi.com
Download Datasheet Parametric View All

LM2864-300 Overview

EEPROM, 8KX8, 300ns, Parallel, NMOS, CQCC32

LM2864-300 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLSC/CSI
package instructionQCCN, LCC32,.45X.55
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time300 ns
Other featuresAUTOMATIC WRITE
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-CQCC-N32
JESD-609 codee0
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Encapsulate equivalent codeLCC32,.45X.55
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyNMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
Maximum write cycle time (tWC)10 ms
Base Number Matches1
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