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AO4622

Description
Power Field-Effect Transistor, 20V, 0.023ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8
CategoryDiscrete semiconductor    The transistor   
File Size252KB,9 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Download Datasheet Parametric View All

AO4622 Overview

Power Field-Effect Transistor, 20V, 0.023ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8

AO4622 Parametric

Parameter NameAttribute value
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain-source on-resistance0.023 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)35 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
AO4622
20V Dual P + N-Channel MOSFET
General Description
The AO4622 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used
to form a level shifted high side switch, and for a
host of other applications.
Product Summary
N-Channel
P-Channel
V
DS
(V) = 20V
-20V
-5A (V
GS
=-4.5V)
I
D
= 7.3A (V
GS
=4.5V)
R
DS(ON)
R
DS(ON)
< 23mΩ (V
GS
=10V)
< 53mΩ (V
GS
= -4.5V)
< 87mΩ (V
GS
= -2.5V)
< 30mΩ (V
GS
=4.5V)
< 84mΩ (V
GS
=2.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
Top View
S1
G1
S2
G2
Pin1
D1
D1
D2
D2
D1
D2
G1
S1
G2
S2
n-channel
p-channel
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
B
T
A
=25°
C
Power Dissipation
Avalanche Current
B
Repetitive avalanche energy 0.3mH
B
Max p-channel
-20
±12
-5
-4.2
-25
2
1.44
13
25
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
T
A
=70°
C
P
D
I
AR
E
AR
T
J
, T
STG
±16
7.3
6.2
35
2
1.44
13
25
-55 to 150
W
A
mJ
°
C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
40
62.5
110
40
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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