Fast Recovery
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDA669 Series
300 nsec
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SDA669 __ __ _F_ __ __ __
│ │ │ │ │ └
Screening
2/
│ │ │ │ │
__
= Not Screened
│ │ │ │ │
TX = TX Level
│ │ │ │ │
TXV = TXV Level
│ │ │ │ │
S = S Level
└
Lead Bend
3/
│ │ │ │
│ │ │ │
__
= Straight Leads
│ │ │ │
UB = Up Bend
│ │ │ │
DB = Down Bend
│ │ │ └
Terminals
3/
│ │ │
__
= Copper Leads
│ │ │
T = Turret Terminals
│ │ └
Speed
F
= Fast (250 ns typ.)
│ │
│ └
Voltage
J
= 600 V
│
K = 800 V
│
M = 1000 V
└
Polarity
(__: standard, R: reverse)
30 AMP
600 – 1000 VOLTS
THREE PHASE BRIDGE
RECTIFIER ASSEMBLY
Features:
Up to 1000 V Blocking Voltage
Average Output Current 30 Amps
Low Reverse Leakage Current
Constructed with Void-Free, Hermetically Sealed
Discretes
Aluminum Case for Maximum Thermal Conductivity
Small Package Size (1.500” x 0.875” x 0.310”)
2/
TX, TXV and Space Level Screening Available
Standard, Ultra Fast, and Hyper Fast versions available -
Contact Factory
Custom Lead Bend Options Available Upon Request –
3/
Contact Factory
Maximum Ratings
Peak Repetitive and Peak Surge Reverse Voltage
Average Rectified Forward Current
4/
(Resistive Load, 60 hz Sine Wave, T
C
= 55°C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25°C)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
SDA669 ( __ )
SDA669 (T)
SDA669J
SDA669K
SDA669M
Symbol
V
RRM
V
RSM
V
R
Io
I
FSM
Top & Tstg
R
ƟJC
Value
600
800
1000
30
125
-55 to +150
2.0
Units
Volts
Amps
Amps
ºC
ºC/W
1
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0026G
DOC
Fast Recovery
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDA669 Series
300 nsec
Symbol
I
F
= 3A
I
F
= 9A
V
F1
V
F2
I
R1
I
R2
t
RR
Electrical Characteristic
5/
Instantaneous Forward Voltage Drop
(T
A
= 25ºC, 300 - 500 µsec pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC, 300 µsec pulse minimum)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC, 300 µsec pulse minimum)
Reverse Recovery Time
(T
A
= 25ºC, I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A)
Min
––
––
––
––
Typ
––
––
––
250
Max
1.15
1.30
5
60
300
Units
V
DC
µA
µA
nsec
CASE OUTLINE: SDA669 ( __ )
CASE OUTLINE: SDA669 (T)
Lead Bend Options
3/
Available Part Numbers:
SDA669JF; SDA669JFT, SDA669RJF; SDA669RJFT, SDA669JFUB;
SDA669JFDB, SDA669RJFUB; SDA669RJFDB;
SDA669KF; SDA669KFT, SDA669RKF; SDA669RKFT, SDA669KFUB;
SDA669KFDB, SDA669RKFUB; SDA669RKFDB;
SDA669MF; SDA669MFT, SDA669RMF; SDA669RMFT, SDA669MFUB;
SDA669MFDB, SDA669RMFUB; SDA669RMFDB
NOTES:
Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
For Ordering Information, Price, and Availability - Contact Factory.
Screening based on MIL-PRF-19500. Screening flows available on request.
Up and Down Bend Configurations are Available for ‘__’ (Leaded) Packages Only.
Custom lead bend options available upon request.
4/ Derate Linearly at 0.316A/ºC for T
C
> 55ºC.
5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
*
1/
2/
3/
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0026G
DOC
PCB Design
京公网安备 11010802033920号
EEWORLD
