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SAB10E3

Description
Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size117KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

SAB10E3 Overview

Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-41,

SAB10E3 Parametric

Parameter NameAttribute value
package instructionO-XALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage10 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

SAB10E3 Related Products

SAB10E3 SAB10
Description Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-41,
package instruction O-XALF-W2 O-XALF-W2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code DO-41 DO-41
JESD-30 code O-XALF-W2 O-XALF-W2
Maximum non-repetitive peak reverse power dissipation 500 W 500 W
Number of components 1 1
Number of terminals 2 2
Package body material UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
polarity UNIDIRECTIONAL UNIDIRECTIONAL
Maximum repetitive peak reverse voltage 10 V 10 V
surface mount NO NO
technology AVALANCHE AVALANCHE
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Base Number Matches 1 1

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