BSP 171
SIPMOS
®
Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• Avalanche rated
• V
GS(th)
= -0.8...-2.0 V
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP 171
Type
BSP 171
V
DS
-60 V
I
D
-1.7 A
R
DS(on)
0.35
Ω
Package
SOT-223
Marking
BSP 171
Ordering Code
Q67000-S224
Tape and Reel Information
E6327
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
-1.7
Unit
A
I
D
I
Dpuls
-6.8
T
A
= 24 °C
DC drain current, pulsed
T
A
= 25 °C
Avalanche energy, single pulse
E
AS
8
mJ
I
D
= -1.7 A,
V
DD
= -25 V,
R
GS
= 25
Ω
L
= 3.23 mH,
T
j
= 25 °C
Gate source voltage
Power dissipation
V
GS
P
tot
±
20
1.8
V
W
T
A
= 25 °C
Semiconductor Group
1
18/02/1997
BSP 171
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
Thermal resistance, junction-soldering point
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
70
≤
10
E
55 / 150 / 56
K/W
Unit
°C
T
j
T
stg
R
thJA
R
thJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
-60
-
-1.4
-0.1
-10
-10
0.22
-
-2
V
V
GS
= 0 V,
I
D
= -0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
-0.8
V
GS=
V
DS,
I
D
= -1 mA
Zero gate voltage drain current
I
DSS
-
-
-1
-100
µA
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
I
GSS
-
-100
nA
Ω
-
0.35
V
GS
= -20 V,
V
DS
= 0 V
Drain-Source on-state resistance
R
DS(on)
V
GS
= -10 V,
I
D
= -1.7 A
Semiconductor Group
2
18/02/1997
BSP 171
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
1
1.55
720
290
120
-
S
pF
-
960
435
180
ns
-
16
25
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= -1.7 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.3 A
R
GS
= 50
Ω
Rise time
t
r
-
70
105
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.3 A
R
GS
= 50
Ω
Turn-off delay time
t
d(off)
-
230
310
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
Fall time
t
f
-
280
375
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.3 A
R
GS
= 50
Ω
Semiconductor Group
3
18/02/1997
BSP 171
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
-0.9
300
0.82
-1.7
-6.8
V
-
-1.2
ns
-
-
µC
-
-
Values
typ.
max.
Unit
I
SM
V
SD
t
rr
Q
rr
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -3.4 A,
T
j
= 25 °C
Reverse recovery time
V
R
= 30 V,
I
F=
l
S
= 0 , di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
= 0 , di
F
/dt = 100 A/µs
Semiconductor Group
4
18/02/1997
Microcontroller MCU
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