
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 0.3 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 1 W |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) |
| Base Number Matches | 1 |