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BUK1M200-50SDLD

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size86KB,14 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BUK1M200-50SDLD Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK1M200-50SDLD Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknown
Is SamacsysN
Maximum drain current (Abs) (ID)1.7 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)9.4 W
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches1
BUK1M200-50SDLD
Quad channel TOPFET™
Rev. 01 — 02 April 2003
Product data
1. Product profile
1.1 Description
Quad temperature and overload protected logic level power MOSFET in TOPFET™
technology in a 20-pin surface mount plastic package.
Product availability:
BUK1M200-50SDLD in SOT163-1 (SO20).
1.2 Features
s
s
s
s
Power TrenchMOS™
Overtemperature protection
Overload protection
Input-source voltage resets latched
protection circuitry.
s
Input used to control output stage and
supply overload protection circuits
s
s
s
s
5 V logic compatible input level
Current limiting
ESD protection for all pins
Overfatigue clamping for turn off of
inductive loads
s
Low operating input current permits
direct drive by micro-controller.
1.3 Applications
s
Low-side driver
s
Low frequency Pulse Width
Modulation
s
DC switching
s
General purpose switch for driving
lamps, motors, solenoids and heaters.
1.4 Quick reference data
Table 1:
Symbol
R
DSon
P
tot
T
j
V
DS
[1]
Quick reference data
Parameter
drain-source on-state resistance
total power dissipation
junction temperature
drain-source voltage
[1]
Min
-
-
-
-
Max
200
9.4
150
50
Unit
mΩ
W
°C
V
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