P
ACKAGED
1W P
OWER
PHEMT
•
FEATURES
♦
31 dBm Output Power at 1-dB Compression at 15 GHz
♦
9 dB Power Gain at 15 GHz
♦
42 dBm Output IP3 at 15GHz
♦
60% Power-Added Efficiency
LP1500P100
•
DESCRIPTION AND APPLICATIONS
The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25
µm
x 1500
µm
Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si3N4 passivation and is available in die form or in other packages.
The LP1500P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
•
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
°
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Output Third-Order Intercept Point
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=15 GHz
Symbol
I
DSS
P-1dB
G-1dB
PAE
IP3
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
;
P
IN
= 17 dBm
V
DS
= 8V; I
DS
= 50% I
DSS
;
P
IN
= 10 dBm
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 5 mA
I
GS
= 8 mA
I
GD
= 8 mA
-0.25
-12
-12
300
Min
375
29.5
8
Typ
490
31
9
60
42
925
400
10
-1.2
-15
-16
100
-2.0
Max
600
Units
mA
dBm
dB
%
dBm
mA
mS
µA
V
V
V
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
P
ACKAGED
1W P
OWER
PHEMT
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Notes:
•
•
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Test Conditions
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
—
T
Ambient
= 22
±
3
°C
-65
Min
Max
12
-4
2xI
DSS
15
700
175
175
3.0
Units
V
V
mA
mA
mW
ºC
ºC
W
LP1500P100
•
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
P
TOT
= 3.0W – (0.020W/°C) x T
HS
where T
HS
= heatsink or ambient temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
•
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
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