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1N6641US

Description
Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SURFACE MOUNT PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size425KB,3 Pages
ManufacturerBkc Semiconductors Inc.
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1N6641US Overview

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SURFACE MOUNT PACKAGE-2

1N6641US Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBkc Semiconductors Inc.
package instructionSURFACE MOUNT PACKAGE-2
Reach Compliance Codeunknown
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-XELF-R2
JESD-609 codee0
Maximum non-repetitive peak forward current2.5 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
GuidelineMIL-19500/609D
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.005 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

1N6641US Related Products

1N6641US 1N6639US 1N6640US
Description Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SURFACE MOUNT PACKAGE-2 Rectifier Diode, 1 Element, 0.3A, 100V V(RRM), Silicon, SURFACE MOUNT PACKAGE-2 Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SURFACE MOUNT PACKAGE-2
Is it Rohs certified? incompatible incompatible incompatible
Maker Bkc Semiconductors Inc. Bkc Semiconductors Inc. Bkc Semiconductors Inc.
package instruction SURFACE MOUNT PACKAGE-2 SURFACE MOUNT PACKAGE-2 SURFACE MOUNT PACKAGE-2
Reach Compliance Code unknown unknown unknown
Is Samacsys N N N
Other features METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.2 V 1.1 V
JESD-30 code O-XELF-R2 O-XELF-R2 O-XELF-R2
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 2.5 A 2.5 A 2.5 A
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C
Maximum output current 0.3 A 0.3 A 0.3 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Guideline MIL-19500/609D MIL-19500/609D MIL-19500/609D
Maximum repetitive peak reverse voltage 75 V 100 V 75 V
Maximum reverse recovery time 0.005 µs 0.004 µs 0.004 µs
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1
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