10AM11
11 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10AM11 is a COMMON EMITTER transistor capable of providing 11
Watts of Class A, RF output power to1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55CX, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
41 Watts
50 Volts
3.5 Volts
4.0 Amps
- 65 to +150
o
C
+200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
Ft
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1.0 GHz
Ic = 1.8 A
Vcc = 20 Volts
Vce = 20 V, Ic =1.8 A
MIN
11.0
8.5
2.0
TYP
14.0
1.55
9.0
2.5
30:1
MAX
UNITS
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
H
FE
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance
Ie = 12 mA
Ic = 120 mA
Ic = 120 mA
Vce = 5 V, Ic = 800 mA
Vcb = 28V, f =1.0 MHz
3.5
50
24
20
20
2.5
4.25
Volts
Volts
Volts
pF
C/W
o
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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