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1N6106US

Description
Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size180KB,2 Pages
ManufacturerBkc Semiconductors Inc.
Download Datasheet Parametric View All

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1N6106US Overview

Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon,

1N6106US Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBkc Semiconductors Inc.
Reach Compliance Codeunknown
Is SamacsysN
Minimum breakdown voltage9.5 V
Breakdown voltage nominal value10 V
Shell connectionISOLATED
Maximum clamping voltage15 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-MELF-R2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage7.6 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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