DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB62
Schottky barrier diode
Product specification
2001 Jan 18
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Ultra high switching speed
•
Very low capacitance
•
High breakdown voltage
•
Guard ring protected
•
Ultra small plastic SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
High frequency applications.
DESCRIPTION
Epitaxial Schottky barrier diode encapsulated in a
SOD523 (SC-79) ultra small plastic SMD package.
ESD sensitive device, observe handling precautions.
PINNING
1PS79SB62
handbook, halfpage
1
k
Marking code:
S9.
Fig.1
1
2
Top view
PIN
DESCRIPTION
cathode
anode
2
a
MAM403
Simplified outline (SOD523; SC-79) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
operating ambient temperature
PARAMETER
−
−
−65
−
−65
MIN.
MAX.
40
20
+150
125
+125
V
mA
°C
°C
°C
UNIT
2001 Jan 18
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
Note
1. Pulse test: pulse width = 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
forward voltage
reverse current
diode capacitance
PARAMETER
CONDITIONS
I
F
= 2 mA; see Fig.2; note 1
V
R
= 40 V; see Fig.3; note 1
V
R
= 0 V; f = 1 MHz; see Fig.4
1
0.6
1PS79SB62
MAX.
800
UNIT
mV
µA
pF
VALUE
450
UNIT
K/W
2001 Jan 18
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
1PS79SB62
handbook, halfpage
10
MGT832
10
4
handbook, halfpage
IR
(nA)
(1)
MGT833
IF
(mA)
1
10
3
10
2
(2)
10
10
−1
(2)
(1)
(3)
1
(3)
10
−2
0
0.4
0.8
1.2
1.6
VF (V)
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
2
10
−1
0
10
20
30
VR (V)
40
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
MGT834
handbook, halfpage
0.42
Cd
(pF)
0.38
0.34
0.30
0.26
0.22
0
10
20
30 V (V) 40
R
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2001 Jan 18
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
1PS79SB62
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.7
0.5
bp
0.35
0.25
c
0.2
0.1
D
1.3
1.1
E
0.9
0.7
HE
1.7
1.5
v
0.15
(1)
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
EIAJ
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
2001 Jan 18
5
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