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1N4448-TAP

Description
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size40KB,4 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
Environmental Compliance
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1N4448-TAP Overview

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM),

1N4448-TAP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.72 V
Maximum non-repetitive peak forward current2 A
Number of components1
Maximum operating temperature200 °C
Maximum output current0.15 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
Base Number Matches1
1N4148.1N4448
Vishay Telefunken
Fast Switching Diodes
Features
D
Silicon Epitaxial Planar Diodes
D
Electrically equivalent diodes:
1N4148 – 1N914
1N4448 – 1N914B
Applications
94 9367
Extreme fast switches
Order Instruction
Type
1N4148
1N4448
Type Differentiation
V
RRM
= 100 V V
F
@I
F
10mA = 1 V
V,
V
RRM
= 100 V V
F
@I
F
100mA = 1 V
V,
Ordering Code
1N4148–TAP
1N4148–TR
1N4448–TAP
1N4448–TR
Remarks
Ammopack
Tape and Reel
Ammopack
Tape and Reel
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
P
V
T
j
T
stg
Value
100
75
2
500
300
150
440
500
200
–65...+200
Unit
V
V
A
mA
mA
mA
mW
mW
°
C
°
C
t
p
=1
m
s
V
R
=0
l=4 mm, T
L
=45
°
C
l=4 mm, T
L
25
°
C
x
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4 mm, T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
Document Number 85521
Rev. 4, 12-Feb-01
www.vishay.com
1 (4)

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