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1N4797

Description
Variable Capacitance Diode, 56pF C(T), 17V, Silicon, Abrupt, DO-7
CategoryDiscrete semiconductor    diode   
File Size11KB,1 Pages
ManufacturerCobham PLC
Download Datasheet Parametric View All

1N4797 Overview

Variable Capacitance Diode, 56pF C(T), 17V, Silicon, Abrupt, DO-7

1N4797 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCobham PLC
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage17 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio2.32
Nominal diode capacitance56 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
minimum quality factor15
Maximum repetitive peak reverse voltage15 V
Maximum reverse current0.005 µA
Reverse test voltage15 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
Base Number Matches1
K
NOX
S
EMICONDUCTOR,
I
NC.
GENERAL PURPOSE ABRUPT TUNING DIODES
1N4786 - 1N4815
TYPE
NUMBER
1N4786
1N4787
1N4788
1N4789
1N4790
1N4791
1N4792
1N4793
1N4794
1N4795
1N4796
1N4797
1N4798
1N4799
1N4800
1N4801
1N4802
1N4803
1N4804
1N4805
1N4806
1N4807
1N4808
1N4809
1N4810
1N4811
1N4812
1N4813
1N4814
1N4815
CAPACITANCE
@ - 4 Vdc
1MHz (pF)
6.8
8.2
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
6.8
8.2
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
CAPACITANCE RATIO
0.1 V TO 4 V
MIN
MAX
2.40
2.42
2.34
2.35
2.37
2.36
2.35
2.35
2.35
2.34
2.33
2.32
2.30
2.26
2.24
2.40
2.42
2.34
2.35
2.37
2.36
2.35
2.35
2.35
2.34
2.33
2.32
2.30
2.26
2.24
2.56
2.58
2.50
2.49
2.49
2.48
2.46
2.46
2.46
2.46
2.43
2.42
2.40
2.36
2.33
2.56
2.58
2.50
2.49
2.49
2.48
2.46
2.46
2.46
2.44
2.43
2.42
2.40
2.36
2.33
CAPACITANCE RATIO
MWV TO 4 V
MIN
MAX
0.462
0.455
0.443
0.441
0.438
0.487
0.487
0.486
0.485
0.483
0.483
0.551
0.551
0.549
0.547
0.260
0.263
0.242
0.242
0.242
0.242
0.241
0.276
0.287
0.300
0.313
0.348
0.398
0.477
0.478
0.482
0.473
0.461
0.457
0.448
0.497
0.497
0.496
0.495
0.494
0.492
0.561
0.561
0.558
0.553
0.285
0.283
0.262
0.259
0.256
0.254
0.252
0.285
0.295
0.306
0.320
0.354
0.404
0.483
0.484
MAX WORKING
VOLTAGE
(Vdc)
25
25
25
25
25
20
20
20
20
20
20
15
15
15
15
100
100
100
100
100
90
90
65
60
55
50
40
30
20
20
MIN BREAKDOWN
VOLTAGE Ir = 100µA
(Vdc)
28
28
28
28
28
22
22
22
22
22
22
17
17
17
17
110
110
110
110
110
99
99
72
66
61
55
44
33
22
22
Package Style
DC Power Dissipation (Pd)
Forward Voltage Drop
Quality Factor (Q)
@Ta = 25°C
@If = 100 mA
Vr = 4 Vdc; f = 1mhz
Vr =4 Vdc; f = 50 Mhz
Reverse Current (Ir)
@MWV
Operating Temperature (Topr)
-65 to + 150°C
Storage Temperature (Tstg)
Capacitance Tolerance:
Standard
DO-7
500 mW
1.0 Vdc
750 min
15 min
5nA
-65 to + 150°C
±20%
P.O. BOX 609 • ROCKPORT, MAINE 04856
• 207•236•6076
FAX 207•236•9558
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