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ACE24C08DP+TH

Description
Two-wire Serial EEPROM
File Size290KB,17 Pages
ManufacturerACE [ACE Technology Co., Ltd.]
Download Datasheet View All

ACE24C08DP+TH Overview

Two-wire Serial EEPROM

 
                                                                
ACE24(L)C02/04/08/16
Two-wire Serial EEPROM
                                             
Technology
Description
The ACE24(L)C02/04/08/16 provides 2048 / 4096 / 8192 / 16384 bits of serial electrically erasable and
programmable read-only memory (EEPROM) organized as 256/512/1024/2048 words of 8 bits each. The device is
optimized for use in many industrial and commercial applications where low-power and low-voltage
operations are essential.
Features
Low Operation Voltage:
ACE24C02/04/08/16 : Vcc=2.2V to 5.5V
ACE24LC02/04/08/16 : Vcc=1.7V to 3.6V
Internally Organized: 266x/(2K), 512x8(4K), 1024x8(8K) or 204/x8(16K)
Two-wire Serial Interface
Schmitt Trigger, Filtered Inputs for Noise Suppression
Bi-directional Data Transfer Protocol
ACE24C02/04/08/16 :100kHz(2.2V) and 400kHz(5V) Compatibility
ACE24LC02/04/08/16 :1MHz (3.6V,2.7V,2.5V) and 400 kHz (1.7V) Compatibility
Write Protect Pin for Hardware Data Protection
8-byte Page(02), 16-byte Page (04,08,16) Write Modes
Partial Page Writes are Allowed
Self-timed Write Cycle (5 ms max)
High-reliability - Endurance: 1,000,000 Write Cycles
- Data Retention: 100 Years
PDIP-8,SOP-8,TSSOP-8 ROHS compliant Packages
Wafer Sales: available in inked wafer Form
Absolute Maximum Ratings
Operating Temperature
-55℃ to +125℃
Storage Temperature
-65℃ to +150℃
Voltage on Any Pin with Respect to Ground
-1.0V to +7.0V
Maximum Operating Voltage ACE24(L)C02/04/08/16
6.25V
DC Output Current
5.0 mA
*Notice: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
VER 1.3
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