GenX3
TM
1200V
IGBTs
High-Speed Low-Vsat PT
IGBTs 3-20 kHz Switching
IXGA30N120B3
IXGP30N120B3
IXGH30N120B3
V
CES
I
C110
V
CE(sat)
t
fi(typ)
TO-263 (IXGA)
=
=
≤
£
=
1200V
30A
3.5V
204ns
G
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
C
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 5Ω
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
1200
1200
± 20
± 30
60
30
150
I
CM
= 60
V
CE
≤
V
CES
300
- 55 ... +150
150
- 55 ... +150
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Features
G = Gate
E = Emitter
G
C
E
E
V
V
V
V
A
A
A
A
TO-247 (IXGH)
TO-220 (IXGP)
C (Tab)
G
CE
C (Tab)
C (Tab)
C
= Collector
Tab = Collector
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
300
260
1.13/10
2.5
3.0
6.0
Optimized for Low Conduction and
Switching Losses
Square RBSOA
International Standard Packages
Advantages
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
GE
= 0V
I
C
= 250μA, V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
V
CE
= 0V, V
GE
=
±20V
I
C
= 30A, V
GE
= 15V, Note 1
T
J
= 125°C
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1200
3.0
5.0
V
V
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
100
μA
1 mA
±100
2.96
2.95
3.5
nA
V
V
© 2009 IXYS CORPORATION, All Rights Reserved
DS99730B(10/09)
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
R
thCS
Inductive load, T
J
= 125°C
°
I
C
= 30A,V
GE
= 15V
V
CE
= 0.8
•
V
CES
,R
G
= 5Ω
Notes 2
°
Inductive load, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 0.8
•
V
CES
, R
G
= 5Ω
Notes 2
I
C
= 30A, V
GE
= 15V, V
CE
= 0.5
•
V
CES
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 30A, V
CE
= 10V, Note 1
Characteristic Values
Min.
Typ.
Max.
11
19
1750
120
46
87
15
39
16
37
3.47
127
204
2.16
18
38
6.70
216
255
5.10
0.50
0.21
200
380
4.0
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.42
°C/W
°C/W
°C/W
TO-247 (IXGH) AD Outline
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
TO-220 (IXGP) Outline
TO-220
TO-247
Notes:
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
TO-263 (IXGA) Outline
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
14.61
2.29
1.02
1.27
0
4.83
0.99
1.40
0.74
1.40
9.65
8.89
10.41
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.190
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.005
1 = Gate
2 = Collector
3 = Emitter
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Bottom Side
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 1. Output Characteristics @ T
J
= 25ºC
60
V
GE
= 15V
13V
11V
200
180
160
13V
140
V
GE
= 15V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
50
I
C
- Amperes
40
I
C
-
Amperes
9V
30
120
100
80
11V
20
7V
9V
60
40
20
7V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
3
6
9
12
15
18
21
24
27
30
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
60
V
GE
= 15V
13V
11V
1.6
V
GE
= 15V
1.4
Fig. 4. Dependence of V
CE(sat)
on
JunctionTemperature
I
= 60A
50
C
I
C
- Amperes
40
9V
30
V
CE(sat)
- Normalized
1.2
I
1.0
C
= 30A
20
7V
10
5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.8
I
0.6
-50
-25
0
25
50
75
100
125
150
C
= 15A
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
8
60
7
T
J
= 25ºC
50
Fig. 6. Input Admittance
I
C
-
Amperes
6
V
CE
- Volts
I
5
C
= 60A
40
30
4
30A
20
T
J
= 125ºC
25ºC
- 40ºC
3
15A
2
6
7
8
9
10
11
12
13
14
15
10
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
V
GE
- Volts
V
GE
- Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 7. Transconductance
16
24
T
J
= - 40ºC
14
20
25ºC
125ºC
12
V
CE
= 600V
I
C
= 30A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
V
GE
- Volts
16
10
8
6
12
8
4
4
2
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
80
90
0
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
70
Fig. 10. Reverse-Bias Safe Operating Area
f
= 1 MHz
Capacitance - PicoFarads
60
50
1,000
Cies
I
C
- Amperes
40
30
20
10
0
200
Coes
100
T
J
= 125ºC
R
G
= 5Ω
dv / dt < 10V / ns
Cres
10
0
5
10
15
20
25
30
35
40
300
400
500
600
700
800
900
1000
1100
1200
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z
(th)JC
- ºC / W
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
18
16
14
E
off
V
CE
= 960V
E
on
-
20
16
14
12
E
off
V
CE
= 960V
E
on
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
16
---
18
16
----
14
12
T
J
= 125ºC , V
GE
= 15V
R
G
= 5
Ω
,
V
GE
= 15V
E
on
- MilliJoules
E
off
- MilliJoules
E
off
- MilliJoules
E
on
- MilliJoules
12
10
8
6
4
2
5
7
9
11
13
15
17
19
21
23
25
I
C
= 30A
I
C
14
= 60A
12
10
8
6
4
10
8
6
4
2
0
15
20
25
T
J
= 125ºC
10
8
6
4
T
J
= 25ºC
2
0
30
35
40
45
50
55
60
R
G
- Ohms
I
C
- Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
14
12
10
E
off
V
CE
= 960V
I
C
= 60A
8
6
4
2
0
25
35
45
55
65
75
85
95
105
115
10
8
6
4
2
125
E
on
16
460
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
650
----
R
G
= 5Ω
,
V
GE
= 15V
14
12
t
f
420
V
CE
= 960V
t
d(off)
- - - -
550
T
J
= 125ºC, V
GE
= 15V
t
d(off)
- Nanoseconds
E
off
- MilliJoules
t
f
- Nanoseconds
380
I
340
C
450
= 60A
350
E
on
- MilliJoules
300
I
C
= 30A
250
I
C
= 30A
260
150
220
5
7
9
11
13
15
17
19
21
23
25
50
T
J
- Degrees Centigrade
R
G
- Ohms
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
450
400
350
300
250
200
150
100
15
20
25
30
35
40
45
50
55
60
T
J
= 25ºC
400
425
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
280
t
f
V
CE
= 960V
t
d(off)
- - - -
350
300
250
200
150
100
50
t
f
375
V
CE
= 960V
t
d(off)
- - - -
250
R
G
= 5Ω , V
GE
= 15V
R
G
= 5Ω , V
GE
= 15V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
325
I
275
C
220
= 60A, 30A
190
T
J
= 125ºC
225
160
175
130
125
25
35
45
55
65
75
85
95
105
115
100
125
I
C
- Amperes
T
J
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
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