TK12A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
(π-MOSⅦ)
TK12A60D
Switching Regulator Applications
Ф3.2
±
0.2
10
±
0.3
Unit: mm
2.7
±
0.2
A
3.9 3.0
1.14
±
0.15
2.8 MAX.
2.54
1 2 3
2.6
±
0.1
0.69
±
0.15
Ф0.2
M A
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 0.45
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
⎪
= 7.5 S (typ.)
Low leakage current: I
DSS
= 10
μA
(max) (V
DS
= 600 V)
Enhancement-mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
±30
12
48
45
359
12
4.5
150
−55
to 150
Unit
2.54
0.64
±
0.15
V
V
A
W
mJ
A
mJ
°C
°C
13
±
0.5
15.0
±
0.3
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1: Gate
2: Drain
3: Source
JEDEC
JEITA
TOSHIBA
⎯
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
2.78
62.5
Unit
Internal Connection
2
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 4.36 mH, R
G
= 25
Ω,
I
AR
= 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1
2010-08-12
4.5
±
0.2
TK12A60D
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
12 A
Duty
≤
1%, t
w
=
10
μs
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
50
Ω
I
D
=
6 A
V
OUT
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
6 A
V
DS
=
10 V, I
D
=
6 A
Min
⎯
⎯
600
2.0
⎯
1.9
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.45
7.5
1800
9
190
40
80
15
110
38
24
14
Max
±1
10
⎯
4.0
0.55
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
V
DD
≈
200 V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
R
L
=
33
Ω
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
12 A, V
GS
=
0 V
I
DR
=
12 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1200
13
Max
12
48
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
K12A60D
Part No.
(or abbreviation code)
Lot No.
Note 4
2
2010-08-12
TK12A60D
R
DS (ON)
−
Tc
2
Common source
VGS
=
10 V
Pulse Test
100
Common source
Tc
=
25°C
Pulse Test
I
DR
−
V
DS
Drain-source ON resistance
RDS (ON) (Ω)
1.6
Drain reverse current IDR (A)
10
1.2
6
0.8
12
ID
=
3 A
0.4
1
5
10
3
0
−80
−40
0
40
80
120
160
0.1
0
-0.3
1
-0.6
VGS
=
0 V
-0.9
-1.2
-1.5
Case temperature Tc (°C)
Drain-source voltage
VDS
(V)
Capacitance – V
DS
10000
Ciss
5
V
th
−
Tc
Common source
VDS
=
10 V
ID
=
1mA
Pulse Test
Vth (V)
4
(pF)
1000
Gate threshold voltage
Capacitance C
Coss
100
3
2
10
Common source
VGS
=
0 V
f =1MHz
Tc
=
25°C
0.1
1
10
Crss
1
1
100
0
−80
−40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Case temperature Tc (°C)
P
D
−
Tc
80
500
Dynamic input / output
characteristics
20
Drain power dissipation PD (W)
(V)
400
VDS
60
VDS
200V
16
Drain-source voltage
40
200
VGS
100
Common source
ID
=
12 A
Tc
=
25°C
Pulse Test
8
20
4
0
0
40
80
120
160
0
0
10
20
30
40
50
0
60
Case temperature Tc (°C)
Total gate charge Qg (nC)
4
2010-08-12
Gate-source voltage
300
VDD
=
100 V
400V
12
VGS (V)
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