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JAN1N6632DUS

Description
Zener Diode, 3.3V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size186KB,26 Pages
ManufacturerCompensated Devices Inc.
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JAN1N6632DUS Overview

Zener Diode, 3.3V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2

JAN1N6632DUS Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
package instructionHERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
GuidelineMIL-19500/356H
Nominal reference voltage3.3 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance1%
Working test current380 mA
Base Number Matches1
INCH POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 24 February 2005.
MIL-PRF-19500/356H
24 November 2004
SUPERSEDING
MIL-PRF-19500/356G
5 September 2003
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,
1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,
AND C AND D TOLERANCE SUFFIX DEVICES,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Four
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two
levels of product assurance for each unencapsulated device type die.
1.2 Physical dimensions. See figures 1 (axial leaded), 2 (surface mount), and 3 (die).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings herein (see 3.10) and as follows:
P
T
at
T
L
= +65°C
L = .375 inch
(9.53 mm)
1N4954
through
1N4996
P
T
at
T
L
= +25°C
L = .375 inch (9.53
mm)
1N5968,
1N5969,
1N6632 through
1N6637
P
T
at
T
EC
= +125°C
1N4954US
through
1N4996US
N5968US,
1N5969US,
1N6632US through
1N6637US
5 W (3)
T
J
and T
STG
Barometric pressure
reduced (high altitude
operation)
1N4954 through
1N4996
1N5968,
1N5969,
1N6632 through
1N6637
including US suffix
8 mHg
1N4954 through
1N4996
1N5968,
1N5969,
1N6632 through
1N6637
including US suffix
-65°C to +175°C
5 W (1)
5 W (2)
(1) Derate: See figure 4 herein.
(2) Derate: See figure 5 herein.
(3) Derate: See figures 5, 6 and 7 herein.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil
..
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