EEWORLDEEWORLDEEWORLD

Part Number

Search

JANTX1N4531UR

Description
Rectifier Diode, 1 Element, 0.125A, Silicon,
CategoryDiscrete semiconductor    diode   
File Size451KB,21 Pages
ManufacturerBkc Semiconductors Inc.
Download Datasheet Parametric Compare View All

JANTX1N4531UR Overview

Rectifier Diode, 1 Element, 0.125A, Silicon,

JANTX1N4531UR Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum output current0.125 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
GuidelineMIL-19500/116L
Maximum reverse recovery time0.005 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 25 July 2007.
INCH-POUND
MIL-PRF-19500/116P
25 April 2007
SUPERSEDING
MIL-PRF-19500/116N
27 September 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4148-1, 1N4148UR-1,
1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBD, 1N914,
1N914UR, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS1N4148-1 (see 6.4). Device types 1N914 and 1N4531 are inactive for new design.
This specification is approved for use by all Departments and Agencies
of the Department of Defense.
The requirements for acquiring the product described herein shall consist
of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for switching diodes. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are
provided for each unencapsulated device type.
1.2 Physical dimensions. See figures 1 (DO-35, DO-34), 2 (DO-213AA), 3 (UB), 4 (UB2), and 5 (die).
1.3 Maximum ratings. Unless otherwise specified T = +25°C.
A
VBR VRWM IO(PCB) IFSM TSTG
R
ΘJL
R
ΘJEC
R
ΘJA(PCB)
R
ΘJSP
tp = & TJ L = .375 inch (UR)
TA =
(2) (3) (4)
(UB)
Type
(9.53 mm)
(3)
(3) (4)
75°C 8.3ms
(3)
(1)
°C/W
°C/W
°C/W
°C/W
1N4148-1
325
250
1N4148UR-1
100
1N4148UB, 1N4148UB2,
325
120
1N4148UB2R, 1N4148UBCA,
1N4148UBCC, 1N4148UBD
1N4531
250
325
-65 to
1N4531UR
+175
100
1N914
250
325
1N914UR
100
(1) For temperature-current derating curves, see figures 6 and 7.
(2) T
A
= +75°C for both axial and Metal Electrode Leadless Face diodes (MELF) (UR) on printed circuit board
(PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR) = .061 inch
(1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x
1 inch (25.4 mm) long, lead length L
0.187 inch (≤ 4.75 mm); R
ΘJA
with a defined PCB thermal resistance
condition included, is measured at IO = 200 mA dc.
(3) See figures 8, 9, and 10 for thermal impedance curves.
(4) R
ΘJSP
refers to thermal resistance from junction to the solder pads of the UB package.
V dc V (pk)
100
75
mA
200
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961
A (pk)
°C
2
-65 to
+175
-65 to
+200

JANTX1N4531UR Related Products

JANTX1N4531UR JANTXV1N4531UR JAN1N4531UR JAN1N4531 JAN1N914UR 0791077019_17 JANTXV1N914UR
Description Rectifier Diode, 1 Element, 0.125A, Silicon, Rectifier Diode, 1 Element, 0.125A, Silicon, Rectifier Diode, 1 Element, 0.125A, Silicon, Rectifier Diode, 1 Element, 0.125A, Silicon, SIMILAR TO DO-35, 2 PIN Rectifier Diode, 1 Element, 0.075A, Silicon, 2.00mm Pitch Milli-Grid Receptacle, Vertical, Through Hole, Dual Row, 3.00mm Tail Rectifier Diode, 1 Element, 0.075A, Silicon,
Reach Compliance Code unknown unknown unknown unknown unknown - unknown
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED - ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
JESD-30 code O-LELF-R2 O-LELF-R2 O-LELF-R2 O-XALF-W2 O-LELF-R2 - O-LELF-R2
Number of components 1 1 1 1 1 - 1
Number of terminals 2 2 2 2 2 - 2
Maximum output current 0.125 A 0.125 A 0.125 A 0.125 A 0.075 A - 0.075 A
Package body material GLASS GLASS GLASS UNSPECIFIED GLASS - GLASS
Package shape ROUND ROUND ROUND ROUND ROUND - ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM - LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
Guideline MIL-19500/116L MIL-19500/116L MIL-19500/116L MIL-19500/116L MIL-19500/116L - MIL-19500/116L
Maximum reverse recovery time 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs - 0.005 µs
surface mount YES YES YES NO YES - YES
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND WIRE WRAP AROUND - WRAP AROUND
Terminal location END END END AXIAL END - END
Base Number Matches 1 1 1 1 1 - -

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2138  60  349  47  2363  44  2  8  1  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号