PD- 96348
AUTOMOTIVE GRADE
Features
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AUIRLR024N
AUIRLU024N
HEXFET
®
Power MOSFET
D
Advanced Planar Technology
Low On-Resistance
Logic-Level Gate Drive
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
(BR)DSS
55V
0.065Ω
17A
G
S
R
DS(on)
max.
I
D
D
D
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
G
D
S
G
D
S
D-Pak
AUIRLR024N
I-Pak
AUIRLU024N
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Max.
17
12
72
45
0.3
± 16
68
11
4.5
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Ã
d
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
e
300 (1.6mm from case )
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
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1
01/18/11
AUIRLR/U024N
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
55
–––
–––
–––
–––
1.0
8.3
–––
–––
–––
–––
Typ.
–––
0.061
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
–––
–––
0.065
0.080
0.110
2.0
–––
25
250
100
-100
Units
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 10A
V/°C Reference to 25°C, I
D
= 1mA
Ω
V
S
µA
nA
V
GS
= 5.0V, I
D
V
GS
= 4.0V, I
D
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 11A
V
DS
= 55V, V
GS
= 0V
f
= 10A
f
= 9.0A
f
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.1
74
20
29
4.5
7.5
480
130
61
15
3.7
8.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nH
ns
nC
I
D
= 11A
V
DS
= 44V
V
GS
= 5.0V,See Fig 6 and 13
V
DD
= 28V
I
D
= 11A
R
G
= 12
Ω,
V
GS
= 5.0V
R
D
= 2.4Ω, See Fig.10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.5
fh
Ãfh
D
G
S
h
D
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
60
130
Max.
17
72
1.3
90
200
Units
A
showing the
integral reverse
Conditions
MOSFET symbol
G
S
Ã
V
ns
nC
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
V
DD
= 25V, starting T
J
= 25°C, L = 790µH, R
G
= 25Ω, I
AS
= 11A. (See Figure 12)
I
SD
≤
11A, di/dt
≤
290A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%
This is applied for I-PAK, L
S
of D-PAK is measured between lead and center of die contact .
Uses IRLZ24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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AUIRLR/U024N
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
D PAK
I-PAK
MSL1
N/A
Class M2(+/-150V )
AEC-Q101-002
†††
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Class H1A(+/-500V )
AEC-Q101-001
Class C5(+/-2000V )
AEC-Q101-005
Yes
†††
†††
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRLR/U024N
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
10
1
2.5V
1
2.5V
20µs PULSE WIDTH
T
J
= 25°C
0.1
1
10
0.1
100
A
V
DS
, Drain-to-Source Voltage (V)
0.1
0.1
20µs PULSE WIDTH
T
J
= 175°C
1
10
100
A
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
T
J
= 25°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
=
17 A
18A
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 175°C
10
2.0
1.5
1
1.0
0.5
0.1
2
3
4
5
6
V
DS
= 15V
20µs PULSE WIDTH
7
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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AUIRLR/U024N
800
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
600
C
iss
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 11A
V
DS
= 44V
V
DS
= 28V
12
9
400
C
oss
6
200
C
rss
3
0
1
10
100
A
0
0
4
8
FOR TEST CIRCUIT
SEE FIGURE 13
12
16
20
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
10µs
T
J
= 175°C
T
J
= 25°C
10
10
100µs
1
0.4
0.8
1.2
1.6
V
GS
= 0V
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
1ms
10ms
2.0
100
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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