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LMUN5136DW1T1G

Description
SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size345KB,12 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

LMUN5136DW1T1G Overview

SMALL SIGNAL TRANSISTOR

LMUN5136DW1T1G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
Number of components2
Polarity/channel typePNP
Maximum power dissipation(Abs)0.385 W
surface mountYES
Transistor component materialsSILICON
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5111DW1T1G series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
LMUN5111DW1T1G
Series
6
5
4
1
2
3
SC-88/SOT-363
. We declare that the material of product compliance with RoHS requirements.
Ordering Information
Device
LMUN51XXDW1T1G
LMUN51XXDW1T3G
Package
SC-88
SC-88
Shipping
3000/Tape&Reel
10000/Tape&Reel
6
5
4
Q
2
R
2
R
1
1
2
R
1
R
2
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol Value
Unit
Collector-Base Voltage
V
CBO
–50
Vdc
Collector-Emitter Voltage
V
CEO
–50
Vdc
Collector Current
I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
P
D
187 (Note 1.)
mW
256 (Note 2.)
T
A
= 25°C
1.5 (Note 1.)
mW/°C
Derate above 25°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
R
θJA
670 (Note 1.)
490 (Note 2.)
°C/W
Q
1
3
MARKING DIAGRAM
6
5
4
XX
1
2
3
xx = Device Marking
=
(See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
R
θJA
R
θJL
T
J
, T
stg
2. FR–4 @ 1.0 x 1.0 inch Pad
1/12

LMUN5136DW1T1G Related Products

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Description SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Maker LRC LRC LRC LRC LRC LRC LRC LRC
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 80 80 80 15 80 3 8 80
Number of components 2 2 2 2 2 2 2 2
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.385 W 0.385 W 0.385 W 0.385 W 0.385 W 0.385 W 0.385 W 0.385 W
surface mount YES YES YES YES YES YES YES YES
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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