LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
NPN Silicon
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
LMBT6428LT1G
LMBT6428LT3G
LMBT6429LT1G
LMBT6429LT3G
Marking
1KM
1KM
1L
1L
Shipping
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
1
2
LMBT6428LT1G
LMBT6429LT1G
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
6428LT1 6429LT1
Unit
50
60
6.0
200
45
55
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3
COLLECTOR
1
BASE
I
C
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
T
J
, T
stg
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
LMBT6428LT1G = 1KM, LMBT6429LT1G = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 0.1mAdc, I
E
= 0)
(I
C
= 0.1mAdc, I
E
= 0)
Collector Cutoff Current
( V
CE
= 30Vdc, )
Collector Cutoff Current
( V
CB
= 30Vdc, I
E
= 0 )
Emitter Cutoff Current
( V
EB
= 5.0Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
EBO
I
CBO
—
—
0.01
0.01
µAdc
LMBT6428LT1G
LMBT6429LT1G
V
(BR)CBO
LMBT6428LT1G
LMBT6429LT1G
I
CBO
—
0.1
µAdc
60
55
—
—
µAdc
V
(BR)CEO
50
45
—
—
Vdc
Vdc
1/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
LMBT6428LT1G
LMBT6429LT1G
LMBT6428LT1G
LMBT6429LT1G
LMBT6428LT1G
LMBT6429LT1G
LMBT6428LT1G
LMBT6429LT1G
V
CE(sat)
––
––
V
BE(on)
0.56
0.2
0.6
0.66
Vdc
250
500
250
500
250
500
250
500
—
—
650
1250
—
—
—
—
Vdc
Min
Max
Unit
––
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.01 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 0.1 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
(I
C
= 100 mAdc, I
B
= 0.5 mAdc)
Base–Emitter On Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V
CE
= 5.0 Vdc, I
C
= 1.0mAdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0 , f = 1.0 MHz)
f
T
C
obo
C
ibo
100
––
––
700
3.0
8.0
MHz
pF
pF
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
e
n
, NOISE VOLTAGE (nV)
I
C
= 10 mA
R
S
~0
~
e
n
, NOISE VOLTAGE (nV)
20
20
R
S
~ 0
~
f = 10 Hz
10
10
3.0 mA
1.0 mA
100 Hz
7.0
5.0
7.0
10 kHz
5.0
1.0 kHz
300
µA
3.0
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
100 kHz
3.0
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
f, FREQUENCY (Hz)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. Effects of Frequency
10
7.0
5.0
2.0
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz
NF, NOISE FIGURE (dB)
I
C
= 10 mA
3.0 mA
1.0 mA
300
µA
100
µA
10
µA
50 100 200
500
1k
2k
I
n
, NOISE CURRENT (pA)
16
BANDWIDTH = 10 Hz to 15.7 kHz
12
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
8.0
500
µA
100
µA
I
C
= 1.0 mA
4.0
10
µA
30
µA
5k
10k 20k
50k 100k
0
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
R
S
~ 0
~
10
20
f, FREQUENCY (Hz)
R
S
, SOURCE RESISTANCE (Ω)
Figure 4. Noise Current
100 Hz NOISE DATA
300
20
Figure 5. Wideband Noise Figure
V
T
, TOTAL NOISE VOLTAGE (nV)
200
BANDWIDTH = 1.0 Hz
3.0 mA
1.0 mA
300
µA
I
C
= 10 mA
100
70
50
30
20
10
7.0
5.0
3.0
10
20
50 100 200
500
NF, NOISE FIGURE (dB)
16
I
C
= 10 mA
3.0 mA
1.0 mA
12
100
µA
30
µA
10
µA
300
µA
8.0
100
µA
4.0
30
µA
BANDWIDTH = 1.0 Hz
10
µA
0
1k
2k
5k
10k 20k
50k 100k
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
R
S
, SOURCE RESISTANCE (Ω)
R
S
, SOURCE RESISTANCE (Ω)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
3/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
h
FE
, DC CURRENT GAIN (NORMALIZED)
4.0
3.0
V
CE
= 5.0 V
2.0
T
A
= 125°C
25°C
1.0
–55°C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
1.0
R
θVBE
, BASE– EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
–0.4
T
J
= 25°C
0.8
–0.8
V, VOLTAGE (VOLTS)
0.6
V
BE
@ V
CE
= 5.0 V
–1.2
0.4
–1.6
T
J
= 25°C to 125°C
0.2
–2.0
–55°C to 25°C
–2.4
0.01 0.02 0.05
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
V
CE(sat)
@ I
C
/I
B
= 10
0
0.01 0.02 0.05
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
8.0
6.0
Figure 10. Temperature Coefficients
f
T
, CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
50
T
J
= 25°C
C
ob
C
eb
C
cb
C
ib
300
C, CAPACITANCE (pF)
4.0
3.0
200
2.0
100
V
CE
= 5.0 V
70
50
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70
100
1.0
0.8
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
T
J
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain — Bandwidth Product
4/5
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
D
H
K
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
5/5
京公网安备 11010802033920号
EEWORLD
