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LMBT2369ALT1G

Description
Switching Transistors
File Size269KB,6 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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LMBT2369ALT1G Overview

Switching Transistors

LESHAN RADIO COMPANY, LTD.
Switching Transistors
We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
LMBT2369LT1G
LMBT2369ALT1G
LMBT2369LT3G
LMBT2369ALT3G
Marking
M1J
1JA
M1J
1JA
Shipping
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
3
LMBT2369LT1G
LMBT2369ALT1G
MAXIMUM RATINGS
1
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CES
V
CBO
V
EBO
Value
15
40
40
4.5
200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
1
BASE
2
SC-23/TO-236AB
3
COLLECTOR
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
2
EMITTER
R
θJA
P
D
R
θJA
T
J
, T
stg
DEVICE MARKING
LMBT2369LT1G= M1J, LMBT2369A LT1G = 1JA
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 10 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µAdc,
V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current( V
CB
= 20Vdc, I
E
= 0)
( V
CB
= 20Vdc, I
E
= 0, T
A
=150 °C)
Collector Cutoff Current
( V
CE
= 20Vdc, V
BE
= 0)
LMBT2369A
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
I
CES
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
15
40
40
4.5
0.4
30
0.4
Vdc
Vdc
Vdc
Vdc
µAdc
µAdc
I
CBO
1/6

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