OM150L120CMD datasheet, PDF - EEWORLD Datasheet

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OM150L120CMD: DescriptionInsulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size57KB，2 Pages; ManufacturerOmnirel Corp.

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OM150L120CMD Overview

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel,

OM150L120CMD Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Is Samacsys	N
Collector-emitter maximum voltage	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-X7
Number of components	2
Number of terminals	7
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Base Number Matches	1

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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246

ELECTRICAL CHARACTERISTICS:

OM150L120CMD (Tc= 25°C unless otherwise specified)

Symbol

CES

GES

GE(TH)

CE(SAT)

Min.

1200

100

4.5

6.5

2.6

Typ.

Max

Unit

µA

Characteristic

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage, V

=0V

Zero Gate Voltage Drain Current, V

=0, V

=1200V

Gate Emitter Leakage Current, V

=+/-15V, V

=0V

ON CHARACTERISTICS

Gate Threshold Voltage, V

GE,

=6mA

Collector Emitter Saturation Voltage, V

=15V, IC=150A

DYNAMIC CHARACTERISTICS

Fwd. Transconductance

Input Capacitance

Output Capacitance

Rev. Transfer Capacitance

=5V, I

=150A

=25V

f=1.0MHz

gfs

Cies

Coes

Cres

1.75

1.2

SWITCHING INDUCTIVE LOAD CHARACTERISTICS

Turn-On Delay Time

Rise Time

= 600V, I

=150A

Turn-on Losses

=+15/-10V, R

=5.1Ω

Turn-off Delay Time

L=100µH

Fall Time

Turn-off Losses

DIODE CHARACTERISTICS

Maximum Forward Voltage

t(on)

Eon

td(off)

Eoff

400

250

800

200

Reverse Recovery

Characteristics

=150A, Tj=25°C

Tj=125°C

=600V, Tj=25°C

=150A, Tj=125°C

dI/dt=-1500A/µS Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Qrr

Irr

trr

2.8

2.3

µC

200

400

THERMAL AND MECHANICAL CHARACTERISTICS

Thermal Resistance, Junction to Case (Per IGBT)

Thermal Resistance, Junction to Case (Per Diode)

Maximum Junction Temperature

Isolation Voltage

Screw Torque

Mounting

Screw Torque (M6)

Terminals

Screw Torque (M3)

Terminals

Module Weight

thJC

jMAX

Vis

RMS

320

0.11

0.20

150

2500

°C/W

°C

in-lb

Grams

09/29/98

Rev.02

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