LL5711 and LL6263
Small-Signal Diode
Schottky Diodes
Features
For general purpose applications
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring.
The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
This diode is also available in the DO-35 case with type
designation 1N5711 and 1N6263.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Green
Maximum Ratings and Thermal Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified.)
Parameter
Peak inverse voltage
Power dissipation (Infinite heatsink)
Maximum single cycle surge 10
u
s square wave
Junction temperature
Storage temperature range
LL5711
LL6263
Symbol
V
RRM
P
tot
I
FSM
T
j
T
S
Value
70
60
400
(1)
Unit
Volts
mW
Amps
o
2.0
125
-55 to +150
C
C
o
Electrical Characteristics
(T
J
=25
o
C unless otherwise noted.)
Parameter
Reverse breakdown voltage
Leakage current
Forward voltage drop
Junction capacitance
Reverse recovery time
LL5711
LL6263
Symbol
V
(BR)R
I
R
V
F
C
tot
t
rr
Test Condition
I
R
=10
uA
V
R
=50V
I
F
=1.0mA
I
F
=15mA
V
R
=0V, f=1MHz
I
F
=I
R
=5mA,
recover to 0.1I
R
Min.
70
60
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
-
-
200
0.41
1.0
2.2
1
Unit
Volts
nA
Volt
pF
ns
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
694
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
