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LL46

Description
0.15 A, 100 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size18KB,1 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

LL46 Overview

0.15 A, 100 V, SILICON, SIGNAL DIODE

LL46 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSynSemi
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Number of components1
Maximum operating temperature125 °C
Maximum output current0.25 A
Maximum repetitive peak reverse voltage100 V
surface mountYES
technologySCHOTTKY
LL46
FEATURES :
• For general purpose applications.
• This diode features very low turn-on voltage and
fast switching. This device is protected by a PN
junction guard ring against excessive voltage, such
as electrostatic discharges
• This diode is also available in the DO-35 case with
type designation BAT46
• Pb / RoHS Free
SCHOTTKY BARRIER DIODE
MiniMELF (SOD-80C)
Cathode Mark
φ
0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
MECHANICAL DATA :
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 0.05g
0.049 (1.25)Min.
Mounting Pad Layout
0.098 (2.50)
Max.
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Repetitive Peak Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current at tp < 1s,
Forward Surge Current at tp < 10 ms,
Power Dissipation ,Ta = 65
°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ambient Operating Temperature Range
Storage temperature range
Note: (1) Valid provided that electrodes are kept at ambient temperature
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
D
R
θ
JA
T
J
Ta
T
S
Value
100
150
350
750
200
0.3
(1)
(1)
(1)
(1)
Unit
V
mA
mA
mA
mW
°C/mW
°C
°C
°C
(1)
125
-65 to + 125
-65 to + 150
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Breakdown Voltage
Reverse Current
Pulse Test tp <300µs ,
δ
<2%
Forward Voltage
Pulse Test tp <300µs ,
δ
<2%
Diode Capacitance
Page 1 of 1
Symbol
V
(BR)R
I
R
V
F
Cd
Test Condition
I
R
= 100
µA
pulses
V
R
= 10 V
V
R
= 50 V
V
R
= 75 V
I
F
= 10mA
I
F
= 250mA
V
R
= 1V, f = 1MHz
Min
100
-
-
-
-
-
-
Typ
-
-
-
-
-
-
6
Max
-
0.8
2.0
5.0
0.45
1.00
-
Unit
V
µA
V
pF
Rev. 02 : March 24, 2005
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