202999D • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • May 10, 2017
1
DATA SHEET • SMP1334-084LF: 100 W HIGH-POWER SILICON PIN DIODE
Electrical and Mechanical Specifications
The absolute maximum ratings of the SMP1334-084LF are
provided in Table 1. Electrical specifications are provided in Table
2. Typical DC performance characteristics of the SMP1334-084LF
are illustrated in Figures 1, 2, and 3.
The SMP1334-084LF Evaluation Board is used to test the
performance of the SMP1334-084LF PIN Diode. Figure 4 shows a
Table 1. SMP1334-084LF Absolute Maximum Ratings
1
Parameter
Forward current
Reverse voltage
Dissipated power @ 85
°C
Peak pulse power dissipation @ 85
°C
(10% duty cycle)
Operating temperature
Storage temperature
Junction temperature
Electrostatic discharge:
Charged-Device Model (CDM), Class 4
Human Body Model (HBM), Class 3A
Machine Model (MM), Class C
T
A
T
STG
T
J
ESD
I
F
V
R
P
D
bias schematic, and Table 3 lists the Evaluation Board Bill of
Materials. Typical RF performance of the SMP1334-084LF using
the schematic shown in Figure 4 is summarized in Table 4 and
illustrated in Figures 5, 6, and 7.
An assembly drawing for the Evaluation Board is shown in
Figure 8. The layer detail physical characteristics are provided in
Figure 9.
Symbol
Minimum
Maximum
200
200
1
10
Units
mA
V
W
W
C
C
C
V
V
V
–55
–55
–55
+85
+200
+175
1100
5000
400
1 Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters
set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.
ESD HANDLING:
Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device.
This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce
potentials of several kilovolts on the human body or equipment, which can discharge without detection.
Industry-standard ESD handling precautions should be used at all times.
Table 2. SMP1334-084LF Electrical Specifications
1
(T
A
= +25
C,
Unless Otherwise Noted)
Parameter
Forward voltage
Reverse leakage current
Series resistance
V
F
I
R
R
S
1
R
S
10
R
S
100
Total capacitance
Series inductance
Minority carrier lifetime
I region width
Thermal resistance (Note 2)
Peak thermal resistance
C
T
30
L
S
T
L
W
Θ
JC
Θ
P
Junction-to-case
Single, 1
μs
pulse width,
junction-to-case (10% duty cycle)
I
F
= 10 mA
Symbol
Test Condition
I
F
= 10 mA
V
R
= 200 V
I
F
= 1 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
I
F
= 100 mA, f = 100 MHz
V
R
= 30 V, f = 1 MHz
16.5
2.0
0.45
0.40
0.37
700
50
10
1
0.45
Min
Typ
0.75
10
20
2.5
Max
Units
V
μA
Ω
Ω
Ω
pF
nH
ns
μm
°C/W
°C/W
1 Performance is guaranteed only under the conditions listed in this table.
2 Assume a thermal resistance of 90 °C/W for the junction-to-bottom of the circuit board.
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