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SMB850D-1100-05-1723

Description
Infrared LED,
CategoryLED optoelectronic/LED    photoelectric   
File Size88KB,1 Pages
ManufacturerUshio Opto Semiconductors Inc.
Download Datasheet Parametric Compare View All

SMB850D-1100-05-1723 Overview

Infrared LED,

SMB850D-1100-05-1723 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Optoelectronic device typesINFRARED LED
Base Number Matches1
epitex
Opto-Device & Custom LED
High Power Top LED SMB850D-1100-05-1723
Lead ( Pb ) Free Product – RoHS Compliant
SMB850D-1100-05-1723
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2) PCB board
(3) Lens
High Power Top LED with Cu PCB
SMB850D-1100-05-1723
GaAlAs
1000um*1000um
1pce
850nm typ.
Silver Plated on Cupper
Cu Plate, Gold Plating on the Back
Epoxy Resin
High Power Top LED with Metal PCB
SMB850D-1100-05-1723 assembled on Cu made PCB with connectors.
Its thermal resistance is lower as 10K/W and is furnished with connectors for easy operation.
These devices are intended to be operated at pulsed current of 3A for stable long life.
♦Specifications
♦Outer
dimension (Unit: mm)
♦Absolute
Maximum Ratings
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Thermal Resistance
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
PD
IF
IFP
VR
Rthja
TOPR
TSTG
TSOL
Maximum Rated Value
2800
1000
3000
10
10
-30 ~ +85
-30 ~ +100
255
Unit
mW
mA
mA
V
K/W
°C
°C
°C
Ambient Temperature
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 255°C
‡Thermal resistance: junction – ambient air flow
♦Electro-Optical
Characteristics [Ta=25°C]
Item
Forward Voltage
Pulsed Forward Voltage
Reverse Current
Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
Symbol
VF
VFP
IR
Po
IE
λP
∆λ
θ 1/2
tr
tf
Condition
IF=600mA
IF=1000mA
IFP=3A
VR=10V
IF=600mA
IF=1000mA
IF=600mA
IF=1000mA
IF=100mA
IF=100mA
IF=100mA
IF=100mA
IF=100mA
Minimum
Typical
1.9
2.1
3.5
380
600
270
440
850
40
±33
15
10
Maximum
2.1
2.8
4.7
10
Unit
V
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
280
450
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by Tektronix J-6512.
EPITEX INC. : 66-3, Minamikawabe-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan
Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com.

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SMB850D-1100-05-1723
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Reach Compliance Code unknown
Optoelectronic device types INFRARED LED
Base Number Matches 1
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