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BF994SB-GS08

Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size260KB,7 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
Download Datasheet Parametric View All

BF994SB-GS08 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

BF994SB-GS08 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Shell connectionSOURCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.035 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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