, D
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
UHF linear push-pull power
transistor
FEATURES
• Internal matching for an optimum
wideband capability and high gain
• Poly-silicon emitter-ballasting
resistors for an optimum
temperature profile
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Two npn silicon planar epitaxial
sections in push-pull structure,
intended for use in linear television
transmitters (vision or sound).
The device is encapsulated in a
4-lead SQT262A2 flange envelope
with 2 ceramic caps. The common
emitter is connected to the flange.
PINNING - SOT262A2
PIN
1
BLV62
QUICK REFERENCE DATA
RF performance at T
h
= 25 °C in a common emitter test circuit.
MODE OF
OPERATION
c.w. class-AB
f
(MHz)
V
CE
(V)
P
L
(W)
OP
(dB)
1c
(%)
AG
p
(dB)
(note 1)
860
28
150
> 8.5
typ.
9.5
< 1
> 45
typ. 50 typ. 0.5
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain
compression corresponds with 30% sync input/25% sync output
compression in television service (negative modulation, CCIR system).
PIN CONFIGURATION
1
/"I
2
3
4
5
DESCRIPTION
collector 1
collector 2
base 1
base 2
emitter
3
Top view
4
Fig.1 Simplified outline and symbol.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
UHF linear push-pull power
transistor
LIMITING VALUES (per transistor section unless otherwise specified)
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCEO
VSBO
'c> 'c(AV)
BLV62
PARAMETER
, collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
CONDITIONS
open emitter
open base
open collector
DC or average value
DC operation;
T
rt
= 25 °C
(note 1)
-
-
-
-
MIN.
MAX.
60
28
3
V
V
V
A
r
w
UNIT
12.5
320
PM
T
ag
T,
storage temperature range
junction operating temperature
-65
-
150
200
"C
°C
Note
1. Total device, both sections equally loaded.
MA3W
50
IG
(A)
^
p 350
Mot
(W)
300
T
r
~
70 1
mb
°(
10
V
\i
250
200
150
~
100
50
r
X
->
X
v,
^ ^k- ;=»,
,_ —
—
-^
>c
—
i P^
-», "v.
i ^
L^>
i
"^
S
.
I
—
"V
^
I.
20
40
60
80
100
T
h
^
120
<°C)
1
VCE (V)
100
0
C
Total dev
nee,
both sections equally loaded.
(I) Contiriuous DC operation,
Total de\/ice, both sections equally loaded.
Fig.2 DC SOAR.
(II) Continuous RF operation.
(lll)Shor t time operation during mismatch.
3 Power/temperature derating curve.
UHF linear push-pull power
transistor
THERMAL RESISTANCE
SYMBOL
fV i-mb(DC]
BLV62
PARAMETER
from junction to mounting base
CONDITIONS
PW = 320 W;
T^-25-C
(note 1)
P
w
= 350 W;
T
rt
= 25=C
(note 1)
(note 1)
MAX.
0.55
UNFT
K/W
"lh j-mb(RF)
from junction to mounting base
0.5
KM
R(h mb-h
from mounting base to heatsink
0.15
K/W
Note
1. Total device, both sections equally loaded.
CHARACTERISTICS
Values apply to either transistor section; Tj = 25 °C.
SYMBOL
VIBRICBO
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
DC current gain ratio of both sections
collector capacitance
V<BR)CEO
V(BR)6BO
CONDITIONS
open emitter;
I
0
= 60 mA
open base;
l
c
m
150 mA
open collector;
l
e
= 3 mA
V
M
= 0;
V
CE
= 28 V
V
CE
=
25V;
l
c
= 4.5 A
V
CE
=
25V;
l
c
= 4.5 A
V
CB
= 28 V;
I
E
-I.-0;
f = 1 MHz
MIN.
60
28
3
-
-
—
-
TYP.
—
MAX.
V
UNIT
-
—
30
-
1.5
V
V
mA
ICES
—
h«
Ah
FE
C
c
30
-
—
81
0.67
PF
c
c
.,
collector-flange capacitance
f • 1 MHz
-
5,7
-
PF
UHF linear push-pull power
transistor
BLV62
too
"FE
80
Mnc7j9
350 ,
T
_>— —- —-—
60
_-——
*
—-—
_
"•
40
20
0
6
,
c(
mA) «
V
CE
= 25
V.
= i, = 0 ; f = 1 MHz.
Fig.5 Collector capacitance as a function of
collector-base voltage, typical values.
Fig.4
DC current gain as a function of collector
current, typical values.
10
MRA318
'c
(A)
1
F-.-:
^*"
'h
•--^-^
L.,.1
~y
r/is-c
/0 t
"^^^
-—
^
.
.41..
ji
0.1
•
—i
UG1
• rr-
c
0.5
1
1,5
2
2.5
V
BE
(V)
V
CE
= 25 1
/.
Fig
6
ba
se-emitter
Collector current as a function of
voltage, typical values.
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