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1N5809D3A-JQRS.GCDE

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, DLCC3 VARIANT A, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size727KB,4 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

1N5809D3A-JQRS.GCDE Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, DLCC3 VARIANT A, 2 PIN

1N5809D3A-JQRS.GCDE Parametric

Parameter NameAttribute value
package instructionHERMETIC SEALED, CERAMIC, DLCC3 VARIANT A, 2 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationULTRA FAST RECOVERY POWER
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-CDSO-N2
JESD-609 codee4
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationDUAL
Base Number Matches1
ULTRA FAST RECOVERY
POWER RECTIFIER
1N5809D3A / 1N5809D3B
DLCC3 - Light Weight Hermetic Ceramic Surface Mount
Package is designed as a drop In replacement for “D-5B” / “E-
MELF” package
Ultra Fast Reverse Recovery
Switching Power Supply Applications
Space Level and High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VBR
VRWM
IO
IFSM
TJ
Tstg
Breakdown Voltage
Working Peak Reverse Voltage
Maximum Rectified Current Io
1
= TA +55°C
(1)
Derate above TA 55°C
Surge Current, tp = 8.3ms
(2)
Junction Temperature Range
Storage Temperature Range
110V
100V
3.0A
25mA/°C
125A
-65 to +175°C
-65 to +175°C
THERMAL PROPERTIES
Symbols
R
θJSP(IN)
R
θJA(PCB)
(3)
R
θJA(PCB)
(4)
Parameters
Thermal Resistance, Junction To Solder Pads TSP = 25°C
Thermal Resistance, Junction To Ambient, On PCB
Thermal Resistance, Junction To Ambient, On PCB
Max.
17
50
117
Units
°C/W
°C/W
°C/W
Notes
(1) IO1 is rated at 3.0A @ TA = 55°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where
TJ(Max) does not exceed 175°C; This equates to R
θJA(PCB)
52°C/W.
(2) TA = 25°C @ IO=3.0A and VRWM for ten 8.3mS surges at 1 minute intervals.
(3) PCB = FR4, 0.0625 Inch (1.59mm) thick, single layer, 1.0-Oz Cu, Pad Size, (1.0” x 1.0”), (645mm x 645mm) , horizontal in still air.
(4) PCB = FR4, 0.0625 Inch (1.59mm) thick, single layer, 1.0-Oz Cu, Pad Size, (0.070” x 0.155”)‡, (1.78mm x 3.94mm) ‡, horizontal in still air.
IO1 is rated at 1.5A @ TA = 55°C for PC boards where R
θJA(PCB)
120°C/W. Derate at 12.5mA/°C above TA = 55°C in this case.
‡ Recommended solder pad layout dimensions for this device, as detailed within this datasheet for the D-5B device.
Semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing an order.
Semelab plc
Telephone +44 (0) 1455 556565
Email:
sales@semelab-tt.com
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Website:
http://www.semelab-tt.com
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