SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast
reverse recovery time,
low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
・V
DSS
= 500V, I
D
= 5.0A
・Drain-Source
ON Resistance : R
DS(ON)
=1.4Ω @V
GS
= 10V
・Qg(typ)
= 12nC
・t
rr(typ)
= 150ns
D
KF5N50PR/FR/PS/FS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF5N50PR, KF5N50PS
A
O
C
F
E
G
B
Q
I
K
M
L
J
N
N
H
P
MAXIMUM RATING (Tc=25℃)
RATING
CHARACTERISTIC
SYMBOL
V
DSS
V
GSS
I
D
I
DP
E
AS
E
AR
dv/dt
P
D
T
j
T
stg
83
0.66
150
-55½150
5.0
2.9
13
270
8.6
20
41.5
0.33
KF5N50PR
KF5N50PS
500
±30
5.0*
2.9*
13*
A
KF5N50FR
KF5N50FS
UNIT
1
DIM MILLIMETERS
_
9.9 + 0.2
A
15.95 MAX
B
1.3+0.1/-0.05
C
_
D
0.8 + 0.1
_
E
3.6 + 0.2
_
F
2.8 + 0.1
3.7
G
H
0.5+0.1/-0.05
1.5
I
_
13.08 + 0.3
J
K
1.46
_
1.4 + 0.1
L
_
1.27+ 0.1
M
_
2.54 + 0.2
N
_
4.5 + 0.2
O
_ 0.2
2.4 +
P
_
9.2 + 0.2
Q
2
3
1. GATE
2. DRAIN
3. SOURCE
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25℃
Drain Current
@T
C
=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
V
V
TO-220AB
KF5N50FR, KF5N50FS
A
S
E
G
B
F
C
mJ
mJ
V/ns
W
W/℃
℃
℃
P
DIM
MILLIMETERS
K
L
L
R
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
M
D
D
J
N
N
H
R
thJC
R
thJA
1.5
62.5
3.0
62.5
℃/W
1
2
3
Q
℃/W
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
_
10.0
+
0.3
_
15.0
+
0.3
_
2.70
+
0.3
0.76+0.09/-0.05
_
Φ3.2
+
0.2
_
3.0
+
0.3
_
12.0
+
0.3
0.5+0.1/-0.05
_
13.6
+
0.5
_
3.7
+
0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
_
2.54
+
0.1
_
6.8
+
0.1
_
4.5
+
0.2
_
2.6
+
0.2
0.5 Typ
* : Drain current limited by maximum junction temperature.
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
(KF5N50PR, KF5N50FR)
D
TO-220IS
(KF5N50PS, KF5N50FS)
D
G
S
G
S
2008. 10. 10
Revision No : 0
1/7
KF5N50PR/FR/PS/FS
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250㎂ , V
GS
=0V
I
D
=250㎂, Referenced to 25℃
V
DS
=500V, V
GS
=0V,
V
DS
=V
GS
, I
D
=250㎂
KF5N50PR/FR
KF5N50PS/FS
V
GS
=±30V, V
DS
=0V
V
GS
=±25V, V
DS
=0V
500
-
-
2.0
-
-
-
-
0.55
-
-
-
-
1.15
-
-
10
4.0
±100
±10
1.4
V
V/℃
㎂
V
nA
㎂
Ω
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
j
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
I
DSS
V
th
I
GSS
R
DS(ON)
V
GS
=10V, I
D
=2.5A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SP
V
SD
t
rr
Q
rr
V
GS
<V
th
I
S
=5A, V
GS
=0V
I
S
=5A, V
GS
=0V,
dIs/dt=100A/㎲
-
-
-
-
-
-
-
-
150
0.42
5
A
20
1.4
-
-
V
ns
μ
C
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0V, f=1.0MHz
V
DD
=250V
R
L
=50Ω
R
G
=25Ω
(Note4,5)
V
DS
=400V, I
D
=5A
V
GS
=10V
(Note4,5)
-
-
-
-
-
-
-
-
-
-
12
2.4
5.4
22.5
29
58
18
430
71
7.5
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, I
S
=5A, V
DD
=50V, R
G
=25Ω, Starting T
j
=25℃.
Note 3) I
S
≤5A,
dI/dt≤100A/㎲, V
DD
≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤300㎲,
Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
1
KF5N50
801
PR
2
KF5N50
813
FR
1
2
KF5N50
801
PS
2
KF5N50
813
FS
2
1
PRODUCT NAME
2
LOT NO
2008. 10. 10
Revision No : 0
27
KF5N50PR/FR/PS/FS
Fig1. I
D
- V
DS
100
V
DS
=30V
Fig2. I
D
- V
GS
Drain Current I
D
(A)
Drain Current I
D
(A)
V
GS
=10V
10
1
10
V
GS
=7V
T
C
=100
C
1
V
GS
=5V
10
0
25
C
0.1
0.1
1
10
100
10
-1
2
4
6
8
10
Drain - Source Voltage V
DS
(V)
Gate - Source Voltage V
GS
(V)
Fig3. BV
DSS
- Tj
Normalized Breakdown Voltage BV
DSS
1.2
V
GS
= 0V
I
DS
= 250
Fig4. R
DS(ON)
- I
D
3.0
On - Resistance R
DS(ON)
(Ω)
2.5
V
GS
=6V
1.1
2.0
1.5
V
GS
=10V
1.0
1.0
0.5
0
0
0.9
0.8
-100
-50
0
50
100
150
2
4
6
8
10
12
Junction Temperature Tj ( C )
Drain Current I
D
(A)
Fig5. I
S
- V
SD
10
2
Fig6. R
DS(ON)
- Tj
3.0
V
GS
=10V
I
DS
= 2.5A
Reverse Drain Current I
S
(A)
Normalized On Resistance
2.5
2.0
1.5
1.0
0.5
10
1
T
C
=100
C
25
C
10
0
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0
-100
-50
0
50
100
150
Source - Drain Voltage V
SD
(V)
Junction Temperature Tj ( C)
2008. 10. 10
Revision No : 0
37
KF5N50PR/FR/PS/FS
Fig 7. C - V
DS
1000
12
I
D
=5A
Fig8. Qg- V
GS
Gate - Source Voltage V
GS
(V)
Ciss
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
Capacitance (pF)
100
Coss
10
Crss
1
0
5
10
15
20
25
30
35
40
Drain - Source Voltage V
DS
(V)
Gate - Charge Qg (nC)
Fig9. Safe Operation Area
10
2
Operation in this
Fig10. Safe Operation Area
10
2
Operation in this
(KF5N50PR, KF5N50PS)
(KF5N50FR, KF5N50FS)
area is limited by R
DS(ON)
area is limited by R
DS(ON)
Drain Current ID (A)
10
1
Drain Current ID (A)
100µs
1ms
10
1
100µs
10
0
10ms
100ms
10
0
1ms
10ms
100ms
10
-1
Tc= 25 C
Tj = 150 C
2
Single pulse
DC
10
-1
Tc= 25 C
Tj = 150 C
2
Single pulse
DC
10
10
0
10
1
10
2
10
3
10
10
0
10
1
10
2
10
3
Drain - Source Voltage V
DS
(V)
Drain - Source Voltage V
DS
(V)
Fig11. I
D
- T
j
6
5
Drain Current I
D
(A)
4
3
2
1
0
0
25
50
75
100
125
150
Junction Temperature Tj (
C
)
2008. 10. 10
Revision No : 0
47
KF5N50PR/FR/PS/FS
Fig12. Transient Thermal Response Curve
(KF5N50PR. KF5N50PS)
10
0
Duty=0.5
Transient Thermal Resistance
0.2
10
-1
0.1
0.05
P
DM
t
1
t
2
P
gle
uls
e
0.02
1
0.0
Sin
- Duty Factor, D= t
1
/t
2
- R
thJC
=
T
j(max)
- T
c
P
D
10
0
10
1
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF5N50FR. KF5N50FS)
Duty=0.5
Transient Thermal Resistance
10
0
0.2
0.1
0.05
0.02
0.01
gle
Sin
10
-1
P
DM
t
1
lse
Pu
t
2
10
-2
10
-5
- Duty Factor, D= t
1
/t
2
T
j(max)
- T
c
- R
thJC
=
P
D
10
-4
10
-3
10
-2
10
-1
10
0
10
1
TIME (sec)
2008. 10. 10
Revision No : 0
57
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