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KBU8K

Description
DIODE BRIDGE 800V 8A KBU
Categorysemiconductor    Discrete semiconductor   
File Size187KB,1 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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KBU8K Overview

DIODE BRIDGE 800V 8A KBU

KBU8A THRU KBU8M
SINGLE – PHASE BRIDGE RECTIFIERS
Reverse Voltage – 50 to 1000 Volts
Forward Current – 8.0 Amperes
Features
Ideal for printed circuit board.
Reliable low cost construction utilizing molded plastic
technique
Plastic material has Underwriters Laboratory Flammability
Classification 94V-0.
Surge overload rating:200 amperes peak.
Mounting Position:Any
Absolute Maximum Ratings and Characteristics
Ratings at 25 Cambient temperature unless otherwise specified. Resistive or inductive load , 60Hz, For capacitive load, derate current by 20%
.
o
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
Maximum average forward rectified output current
at T
C
= 100
O
C, T
A
= 65
O
C/ 40
O
C/ 45
O
C
Peak forward surge current 8.3mS single half
sine-wave superimposed on rated load
(MIL-STD-750 method 4066)
Maximum instantanous forward voltage drop per
element at 3.0A/3.0A/8.0A
Maximum DC reverse leakage at rated T
A
= 25
O
C
DC blocking voltage per element
T
C
= 100
O
C
Operating and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
KBU
8A
50
35
50
KBU
8B
100
70
100
KBU
8D
200
140
200
KBU
8G
400
280
400
8
6
KBU
8J
600
420
600
KBU
8K
800
560
800
KBU
8M
1000
700
1000
Units
V
V
V
A
I
FSM
V
F
I
R
T
J
,T
S
300
1
10
300
-65 to +150
A
V
µA
µA
O
C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2003

KBU8K Related Products

KBU8K KBU8M KBU8J KBU8G KBU8D KBU8B KBU8A
Description DIODE BRIDGE 800V 8A KBU 5.6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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