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KBP210

Description
2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size548KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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KBP210 Overview

2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
KBP2005
THRU
KBP210
2.0
Amp Glass
Passivated Bridge
Rectifier
50 to 1000 Volts
KBP
Features
Glass Passivated Die Construction
Low Forward Voltage Drop
Ideal for Printed Circuit Boards
High Surge Current Capability
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Part Number
KBP2005
KBP201
KBP202
KBP204
KBP206
KBP208
KBP210
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
2.0A
T
a
= 50°C
Current
Note1
Peak Forward Surge
I
FSM
50A
8.3ms, half sine
Current
Maximum
Forward
I
F
= 1.5A per
V
F
Voltage Drop Per
element;
1.1V
Element
T
J
= 25°C
Maximum DC
Reverse Current At
I
R
T
a
= 25°C
10µA
Rated DC Blocking
0.5mA T
a
= 100°C
Voltage
Typical Junction
Measured at
Capacitance per
Cj
15PF
1MHZ,
element
VR=4V(DC)
Typical Thermal
Rthja
28 K/W
Note2
Resistance
Note: 1. Leads maintained at ambient temp. at a distance of 9.5mm
from the case
2. Mounted on PC board with 12mm
2
copper pad
DIMENSIONS
INCHES
MIN
MAX
.559
.60
.42
.46
.60
---
.168
.20
.142
.161
.085
.105
.03
.034
.06
---
.46
.50
.50
---
3.2*45
0
Typ.
MM
MIN
MAX
14.22
15.24
10.67
11.68
15.2
---
4.30
5.08
3.60
4.10
2.16
2.67
0.76
0.86
1.52
---
11.68
12.70
12.7
---
3.2*45
0
Typ.
DIM
A
B
C
D
E
G
H
I
J
K
L
www.cnelectr.com

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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