IS61DDB22M36-300M3LI datasheet, PDF

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IS61DDB22M36-300M3LI: Description72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs; File Size585KB，25 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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IS61DDB22M36-300M3LI Overview

72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs

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72 Mb (2M x 36 & 4M x 18)

DDR-II (Burst of 2) CIO Synchronous SRAMs

November

2009

Features

•

x 36 or

x 18.

• On-chip delay-locked loop (DLL) for wide data

valid window.

• Common data input/output bus.

• Synchronous pipeline read with self-timed late

write operation.

• Double data rate (DDR-II) interface for read and

write input ports.

• Fixed 2-bit burst for read and write operations.

• Clock stop support.

• Two input clocks (K and K) for address and con-

trol registering at rising edges only.

• Two input clocks (C and C) for data output con-

trol.

• Industrial temperature available upon request.

• Two echo clocks (CQ and CQ) that are delivered

simultaneously with data.

• +1.8V core power supply and 1.5, 1.8V V

DDQ

used with 0.75, 0.9V V

REF

• HSTL input and output levels.

• Registered addresses, write and read controls,

byte writes, data in, and data outputs.

• Full data coherency.

• Boundary scan using limited set of JTAG 1149.1

functions.

• Byte write capability.

• Fine ball grid array (FBGA) package

- 15mm x 17mm body size

- 1mm pitch

- 165-ball (11 x 15) array

• Programmable impedance output drivers via 5x

user-supplied precision resistor.

Description

The

72Mb IS61DDB22M36

and

IS61DDB24M18

are synchronous, high-perfor-

mance CMOS static random access memory

(SRAM) devices. These SRAMs have a common I/O

bus. The rising edge of K clock initiates the

read/write operation, and all internal operations are

self-timed.

Refer to the

Timing Reference Diagram for Truth

Table

on page

for a description of the basic opera-

tions of these

DDR-II (Burst of 2) CIO

SRAMs.

The input addresses are registered on all rising

edges of the K clock. The DQ bus operates at

double data rate for reads and writes. The following

are registered internally on the rising edge of the K

clock:

• Read and write addresses

• Address load

• Read/write enable

Byte writes

• Data-in

The following are registered on the rising edge of

the K clock:

• Byte writes

• Data-in for second burst addresses

Byte writes can change with the corresponding data-

in to enable or disable writes on a per-byte basis. An

internal write buffer enables the data-ins to be regis-

tered one cycle later than the write address. The first

data-in burst is clocked with the rising edge of the

next K clock, and the second burst is timed to the

following rising edge of the K clock.

During the burst read operation, at the first burst the

data-outs are updated from output registers off the

second rising edge of the C clock (1.5 cycles later).

At the second burst, the data-outs are updated with

the third rising edge of the corresponding C clock

(see page 9). The K and K clocks are used to time

the data-outs whenever the C and C clocks are tied

high.

The device is operated with a single +1.8V power

supply and is compatible with HSTL I/O interfaces.

Integrated Silicon Solution, Inc.

Rev.

11/10/09

72 Mb (2M x 36 & 4M x 18)

DDR-II (Burst of 2) CIO Synchronous SRAMs

The data-in provided for writing is initially kept in write buffers. The information on these buffers is written into

the array on the following write cycle. A read cycle to the last write address produces data from the write

buffers. Similarly, a read address followed by the same write address produces the latest write data. The

SRAM maintains data coherency.

During a write, the byte writes independently control which byte of any of the two burst addresses is written

(see

X18/X36 Write Truth Tables

on page

and

Timing Reference Diagram for Truth Table

on page

8).

Whenever a write is disabled (R/W is high at the rising edge of K), data is not written into the memory.

RQ Programmable Impedance

An external resistor, RQ, must be connected between the ZQ pin on the SRAM and V

to enable the SRAM

to adjust its output driver impedance. The value of RQ must be 5x the value of the intended line impedance

driven by the SRAM. For example, an RQ of 250Ω results in a driver impedance of 50Ω. The allowable range

of RQ to guarantee impedance matching is between 175Ω and 350Ω, with the tolerance described in

Programmable Impedance Output Driver DC Electrical Characteristics

on page 13. The RQ resistor should

be placed less than two inches away from the ZQ ball on the SRAM module. The capacitance of the loaded

ZQ trace must be less than 3 pF.

The ZQ pin can also be directly connected to V

DDQ

to obtain a minimum impedance setting. ZQ must never

be connected to V

Programmable Impedance and Power-Up Requirements

Periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by

drifts in supply voltage and temperature. At power-up, the driver impedance is in the middle of allowable

impedances values. The final impedance value is achieved within 1024 clock cycles.

Single Clock Mode

This device can be also operated in single-clock mode. In this case, C and C are both connected high at

power-up and must never change. Under this condition, K and K will control the output timings.

Either clock pair must have both polarities switching and must never connect to V

REF

, as they are not differ-

ential clocks

Depth Expansion

The following figure depicts an implementation of four

x 18 DDR-II SRAMs with common I/Os. In this appli-

cation example, the second pair of C and C clocks is delayed such that the return data meets the data setup

and hold times at the

memory controller.

Integrated Silicon Solution, Inc.

Rev.

11/10/09

IS61DDB22M36-300M3LI Related Products

	IS61DDB22M36-300M3LI	IS61DDB24M18-250M3L	IS61DDB22M36-250M3L	IS61DDB22M36-250M3	IS61DDB24M18-250M3	IS61DDB22M36
Description	72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs	72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs	72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs	72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs	72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs	72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs

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