IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
NChannel Enhancement Mode
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low
Q
g
and Z-MOS
TM
MOSFET Process
Low Capacitance
R
g
High dv/dt
Optimized for RF Operation
Nanosecond Switching
Ideal for Class C, D, & E Applications
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2Ω
I
S
= 0
V
DSS
I
D25
R
DS(on)
V
V
V
V
A
A
A
mJ
V/ns
V/ns
W
W
W
C/W
C/W
Features
=
=
≤
=
600 V
18 A
0.56
Ω
350
Maximum Ratings
600
600
±20
±30
18
90
18
TBD
5
>200
350
P
DC
S
D D
G S G
= G S
=
60 A = D
60 0B
6
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
T
c
= 25°C, Derate 4.4W/°C above 25°C
T
c
= 25°C
TBD
3.0
TBD
TBD
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
typ.
max.
V
4.6
±100
T
J
= 25C
T
J
=125C
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
V
GS
= 0 V, I
D
= 4 ma
V
DS
= V
GS
, I
D
= 250µΑ
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8V
DSS
V
GS
=0
600
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
•
•
Low gate charge and capacitances
−
easier to drive
−
faster switching
•
Low R
DS(on)
•
Very low insertion inductance (<2nH)
•
No beryllium oxide (BeO) or other
hazardous materials
Advantages
cycling capability
IXYS advanced Z-MOS process
V
nA
µA
mA
Ω
S
+175
°C
°C
+ 175
°C
°C
g
50
1
0.53
6.4
-55
175
-55
V
GS
= 20 V, I
D
= 0.5I
D25
Pulse test, t
≤
300µS, duty cycle d
≤
2%
V
DS
= 50V, I
D
= 0.5I
D25
, pulse test
•
High Performance RF Z-MOS
TM
•
Optimized for RF and high speed
•
Common Source RF Package
•
A = Gate Source Drain
B = Drain Source Gate
Isolated Package, no insulator
required
1.6mm(0.063 in) from case for 10 s
300
3.5
IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
R
G
C
iss
C
oss
C
rss
C
stray
T
d(on)
T
on
T
d(off)
T
off
Q
g(on)
Q
gs
Q
gd
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
T
rr
Test Conditions
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
I
F
=
I
s,
V
GS
=0 V, Pulse test, t ≤ 300 s, duty cycle
≤2%
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
I
G
= 3mA
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 1
Ω
(External)
Back Metal to any Pin
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
typ.
max.
1
Ω
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
2040
160
20
33
4
4
4
6
42
13
18
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
typ.
max.
18
108
1.5
200
Α
A
V
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
6,404,065
6,583,505
6,710,463
6,727,585
6,731,002
IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
Fig. 1
Gate Charge vs. Gate-to-Source Voltage
V
D S
= 300V, I
D
= 9A, I
G
= 3m A
16
20
8V - 15V
7.5V
Fig. 2
Typical Output Characteristics
Gate-to-Source Voltage (V)
14
12
10
8
6
4
2
0
0
20
40
60
80
0
0
20
40
60
80
100
120
I
D
, Drain Currnet (A)
15
10
7V
6.5V
5
6V
Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
V
D S
= 50V
50
45
40
35
30
25
20
15
10
5
0
5
6
7
8
9
10
11
12
13
14
15
Fig. 4
Extended Typical Output Characteristics
80
Top
12V - 15V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
I
D
, Drain Current (A)
I
D
, Drain Currnet (A)
60
40
Bottom
20
0
0
20
40
60
80
100
120
V
GS
, Gate-to Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 5
V
D S
vs.
Capacitance
10000
Capacitance (pF)
1000
100
10
1
0
60
120
180
240
300
360
420
480
V
DS
Voltage (V)
IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
Fig. 6 Package Drawing
60: 1=G, 2=D, 3=S
60A: 1=G, 2=S, 3= D
60B: 1=D, 2=S, 3=G
Doc #dsIXZR16N60_A/B REV 08/09
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An
IXYS
Company
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