HANBit
HMF4M32B8VS
FLASH-ROM MODULE 16MByte (4M x 32-Bit) ,72pin-SODIMM,
3.3V
Part No. HMF4M32B8VS
GENERAL DESCRIPTION
The HMF4M32B8VS is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a
x32bit configuration. The module consists of eight 2M x 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from other flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +3.0V DC power supply.
FEATURES
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Access time : 90, 100 and 120ns
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High-density 16MByte design
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High-reliability, low-power design
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Single + 3V
±
0.3V power supply
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Easy memory expansion
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Hardware reset pin(RESET#)
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FR4-PCB design
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Low profile 72-pin SODIMM
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Minimum 100,000 write/erase cycle
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Flexible sector architecture
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Embedded algorithms
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Erase suspend / Erase resume
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SYMBOL
Vss
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
A10
A0
A1
A2
A3
A4
A5
A6
A11
DQ4
DQ20
DQ5
DQ21
DQ6
PIN ASSIGNMENT
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SYMBOL
DQ22
DQ7
DQ23
A7
A12
Vcc
A8
A9
/WE3
/WE2
A13
A14
A15
A16
Vss
/CE0
/CE2
/CE3
/CE1
/WE0
/WE1
A17
/OE
A18
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
Vcc
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
A19
VSS(PD1)
VSS(PD2)
VSS(PD3)
/RESET
A20
Vss
OPTIONS
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Timing
90ns access
100ns access
120ns access
MARKING
-90
-100
17
18
19
20
21
-120
22
23
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Packages
72-pin SODIMM
B
24
72-PIN SODIMM
TOP VIEW
URL:
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REV.02(August,2002)
1
HANbit Electronics Co., Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
HMF4M32B8VS
DQ 0-DQ31
DQ 0-31
A0-A20
A0-19
DQ32
A21
A0-20
/CE
/OE
/WE0
A0-20
/CE
/OE
/WE1
A0-20
/CE
/OE
/WE2
DQ16-23
DQ8-15
DQ0-7
A0-20
/CE
/OE
/WE0
DQ0-7
U1
/WE
U5
/WE
A0-20
/CE
/OE
/WE1
A0-20
/CE
/OE
/WE2
DQ16-23
DQ8-15
U3
/WE
U7
/WE
U2
/WE
U6
/WE
A0-20
/CE0
/OE
/CE
/OE
DQ24-31
/CE1
/OE
A0-20
/CE
/OE
DQ24-31
U4
/WE
U8
/WE
/WE3
/WE3
URL:
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REV.02(August,2002)
2
HANbit Electronics Co., Ltd.
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TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE:
X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Q
D
HMF4M32B8VS
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
P
D
T
STG
RATING
-0.5V to +4.0V
-0.5V to +4.0V
8W
-65oC to +150oC
Operating Temperature
T
A
-40oC to +85oC
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Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional o peration of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
SYMBOL
V
CC
V
SS
V
IH
V
IL
MIN
2.7V
0
0.7xV
CC
-0.5
TYP.
3.0V
0
-
-
MAX
3.6V
0
Vcc+0.3V
0.8V
DC CHARACTERISTICS (CMOS Compatible)
PARAMETE
DESCRIPTION
R
I
LI
I
LIT
Leakage Current
I
LO
Output Leakage Current
V
OUT
= Vss to Vcc, Vcc= Vcc max
-1.0
+1.0
uA
Input Leakage Current
A9 , /RESET Input
Vcc= Vcc max ; A9,/RESET=12.5V
35
uA
V
IN
=Vss to Vcc, Vcc=Vcc max
-1.0
+1.0
uA
TEST CONDITIONS
MIN
TYP
MAX
UNIT
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REV.02(August,2002)
3
HANbit Electronics Co., Ltd.
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Vcc Active Read Current
I
CC1
(Note1)
Vcc Active Write Current
I
CC2
(Note 2 and 4)
I
CC3
I
CC4
During Reset
Automatic Sleep
I
CC5
Mode(Note3)
V
IL
V
IH
V
ID
and Temporary Unprotect
V
OL
V
OH1
Output High Voltage
V
OH2
Low Vcc Lock-Out
V
LKO
Voltage
Notes :
1.
2.
3.
1.5
I
OH
=-100uA, Vcc= Vcc min
Vcc-0.4
Output Low Voltage
I
OL
=4.0mA, Vcc=Vcc min
I
OH
=-2.0mA, Vcc=Vcc min
0.85xVcc
Input Low Voltage
Input High Voltage
Voltage for Autoselect
Vcc=3.3V
11.5
V
IL
=Vss±0.3V
-0.5
0.7xVcc
V
IH
=Vcc±0.3V;
Vcc Standby Current
Vcc Standby Current
Vcc=Vcc max ; /Reset=Vcc±0.3V
Vcc=Vcc max ; /CE,Reset=Vcc±0.3V
/CE=V
IL
, /OE=V
IH
All Outputs open
1MHZ
/CE=V
IL
, /OE=V
IL
5MHZ
HMF4M32B8VS
16
mA
4
30
5
5
mA
uA
uA
5
0.8
Vcc+0.3
12.5
0.4
uA
V
V
V
V
V
V
V
The Icc current listed includes both the DC operating current ane the frequency dependent component(at 5 MHz).
The read current is typically 9mA (@VCC=3.0V. /OE at V
1H
)
Icc active while Embedded Erase or Embedded Program is progress.
Automatic sleep mode enables the low power mode when adder sses remain stable for t
ACC
+30ns. Typical
sleep mode current is 200nA.
4.
Not 100% tested.
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
Block Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Byte Mode
Word Mode
TYP
0.7
27
9
11
18
12
MAX
15
UNIT
sec
sec
COMMENTS
Excludes 00h programming prior to
erasure
270
330
54
36
us
us
sec
sec
Excludes system level overhead
Notes :
O
1. 25 C, Vcc=3.0V, 100,000 cycles, typical pattern.
2. System-level overhead is defined as the time required to excute the four-bus-cycle command necessary to program
each byte. In the preprogramming step of the internal Erase Routine, all bytes ar e programmed to 00H before erasure.
URL:
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REV.02(August,2002)
4
HANbit Electronics Co., Ltd.
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CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
TEST SETUP
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
V
IN
= 0V
V
OUT
= 0V
V
IN
= 0V
MIN
HMF4M32B8VS
MAX
10
10
10
UNIT
pF
pF
pF
Notes
:
1. Sampled, not 100% tested
2. Test conditions T
A
= 25 C, f=1.0 MHz, VCC=3.3V.
o
TEST SPECIFICATIONS
TEST CONDITION
Output load
Input rise and full times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
VALUE
1TTL gate and C
L
=100pF
5
0.0 - 3.0
1.5
1.5
ns
V
V
V
UNIT
3.0V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
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REV.02(August,2002)
5
HANbit Electronics Co., Ltd.
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