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HMC460_06

Description
0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size395KB,8 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Download Datasheet Parametric Compare View All

HMC460_06 Overview

0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

HMC460_06 Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-55 Cel
Maximum input power18 dBm
Maximum operating frequency20000 MHz
Minimum operating frequency0.0 MHz
Processing package description3.12 X 1.63 MM, 0.10 MM HEIGHT, DIE-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
structureCOMPONENT
terminal coatingNOT SPECIFIED
Impedance characteristics50 ohm
Microwave RF TypeWIDE BAND LOW POWER
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC460 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Features
Noise Figure: 2.5 dB @ 10 GHz
Gain: 14 dB @ 10 GHz
P1dB Output Power: +16 dBm @ 10 GHz
Supply Voltage: +8.0V @ 60 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
Functional Diagram
General Description
The HMC460 is a GaAs MMIC PHEMT Low Noise
Distributed Amplifier die which operates between DC
and 20 GHz. The amplifier provides 14 dB of gain,
2.5 dB noise figure and +16 dBm of output power at
1 dB gain compression while requiring only 60 mA
from a +8V supply. The HMC460 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs) due to
its small size. All data is with the chip in a 50 Ohm test
fixture connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
Electrical Specifications,
T
A
= +25° C, Vdd= 8V, Idd= 60 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.9V Typ.)
14
12
Min.
Typ.
DC - 6.0
14
± 0.5
0.008
4.0
17
17
17
18
27.5
60
13
0.016
5.0
12
Max.
Min.
Typ.
6.0 - 18.0
14
± 0.15
0.01
2.5
22
15
16
18
28
60
12
0.02
3.5
11
Max.
Min.
Typ.
18.0 - 20.0
13
± 0.25
0.01
3.0
15
15
15
17
27
60
0.02
4.0
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
* Adjust Vgg between -2 to 0V to achieve Idd= 60 mA typical.
1 - 94
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC460_06 Related Products

HMC460_06 HMC460
Description 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 °C
Minimum operating temperature -55 Cel -55 °C
Maximum operating frequency 20000 MHz 20000 MHz
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