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HM52Y25165B-B6

Description
256M SDRAM 100 MHz 4-Mword 】 16-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank
File Size365KB,60 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
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HM52Y25165B-B6 Overview

256M SDRAM 100 MHz 4-Mword 】 16-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank

HM52Y25165B-B6
HM52Y25405B-B6
EO
Description
Features
256M SDRAM
100 MHz
4-Mword
×
16-bit
×
4-bank /16-Mword
×
4-bit
×
4-bank
E0146H10 (Ver. 1.0)
Preliminary
May. 28, 2001
The HM52Y25165B is a 256-Mbit SDRAM organized as 4194304-word
×
16-bit
×
4 bank. The
HM52Y25405B is a 256-Mbit SDRAM organized as 16777216-word
×
4-bit
×
4 bank. All inputs and outputs
are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II.
2.5 V power supply
Clock frequency: 100MHz (max)
Single pulsed
RAS
4 banks can operate simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential (BL = 1/2/4/8)
Interleave (BL = 1/2/4/8)
Programmable
CAS
latency: 2, 3
Byte control by DQM : DQM (HM52Y25405B)
: DQMU/DQML (HM52Y25165B)
Refresh cycles: 8192 refresh cycles/64 ms
2 variations of refresh
Auto refresh
Self refresh
Preliminary: The Specifications of this device are subject to change without notice. Please contact to your
nearest Elpida Memory, Inc. regarding specifications.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
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HM52Y25165B-B6 Related Products

HM52Y25165B-B6 HM52Y25405BTT-B6 HM52Y25405B-B6
Description 256M SDRAM 100 MHz 4-Mword 】 16-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank 256M SDRAM 100 MHz 4-Mword 】 16-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank 256M SDRAM 100 MHz 4-Mword 】 16-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank
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