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HM5113165FLTD-6

Description
128M EDO DRAM (8-Mword 】 16-bit) 4k refresh
Categorystorage    storage   
File Size240KB,31 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Download Datasheet Parametric Compare View All

HM5113165FLTD-6 Overview

128M EDO DRAM (8-Mword 】 16-bit) 4k refresh

HM5113165FLTD-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerELPIDA
Parts packaging codeTSOP2
package instructionTSOP2, TSOP50,.46,32
Contacts50
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G50
JESD-609 codee0
length20.95 mm
memory density134217728 bi
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals50
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP50,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Maximum standby current0.001 A
Maximum slew rate0.23 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
HM5113165LTD-6
128M EDO DRAM (8-Mword
×
16-bit)
4k refresh
EO
Description
Features
E0178H10 (Ver. 1.0)
Jul. 12, 2001
The HM5113165F L is 128M-bit dynamic R AM orga nized as 8, 388, 608-word
×
16-bit. It has re alize d high
per forma nce and low powe r by employing C MOS proc ess tec hnology. HM5113165F L off ers Extende d Da ta
Out (EDO) Page Mode as a high speed access mode. It is packaged in 50-pin plastic TSOPII.
Single 3.3 V supply: 3.3 V ± 0.3 V
Access time: 60 ns (max)
Power dissipation
Active: 828 mW (max)
Standby : 1.8 mW (max) (CMOS interface) (L-version)
EDO page mode capability
Refresh cycles
RAS-only
refresh
4096 cycles /64 ms
CBR/Hidden refresh
4096 cycles /64 ms
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
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Pr
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HM5113165FLTD-6 Related Products

HM5113165FLTD-6 HM5113165LTD-6
Description 128M EDO DRAM (8-Mword 】 16-bit) 4k refresh 128M EDO DRAM (8-Mword 】 16-bit) 4k refresh
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