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HER807

Description
8 A, SILICON, RECTIFIER DIODE, TO-220
Categorysemiconductor    Discrete semiconductor   
File Size266KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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HER807 Overview

8 A, SILICON, RECTIFIER DIODE, TO-220

HER801 THRU HER808
GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS
Reverse Voltage – 50 to 1000 Volts
Forward Current – 8.0 Amperes
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0 utilizing
Flame Retardant Epoxy Molding Compound
Low power loss, high efficiency
Low forward voltage, high current capability
High surge capacity
Ultra Fast recovery times, high voltage
Mechanical Data
Case:
Molded plastic TO-220A
Mounting position:
Any
Terminals:
Leads solderable per MIL-STD-202,
method 208 guaranteed
Polarity:
as marked
PIN 1
PIN 2
CASE
PIN 1
PIN 2
CASE
CASE POSITIVE
CASE NEGATIVE
SUFFIX "R"
Maximum Ratings and Electrical Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified. Single-phase, half wave, 60Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
O
current .375”(9.5mm) lead length at T
C
= 100 C
Peak forward surge current ,
8.3ms single half sine-wave superimposed
on rated load (JEDEC method)
Maximum forward voltage @ 8.0A
Maximum reverse current
at rated DC blocking voltage
@ T
A
= 25
O
C
O
@ T
A
= 125 C
V
RRM
V
RMS
V
DC
I
(AV)
HER
801
50
35
50
HER
802
100
70
100
HER
803
200
140
200
HER
804
300
210
300
8.0
HER
805
400
280
400
HER
806
600
420
600
HER
807
800
560
800
HER
808
1000
700
1000
Units
V
V
V
A
I
FSM
V
F
I
R
I
R
C
J
T
rr
R
θ
JC
T
J
T
S
80
50
1.0
150
1.3
10
500
50
80
3.0
-55 to +150
-55 to +150
O
A
1.7
V
uA
uA
pF
nS
C/W
O
O
Typical junction capacitance (Note 1)
Maximum reverse recovery time (Note 2)
Typical thermal resistance (Note3)
Operating temperature range
Storage temperature range
C
C
Note: 1. Measured at 1 MHz and applied reverse voltage of 4.0 Volts D.C.
2. Reverse recovery test conditions: I
F
= 0.5A, I
R
= 1.0A , I
RR
= 0.25A.
3. Thermal Resistance from junction to case mounted on heat sink.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 24/09/2003

HER807 Related Products

HER807 HER801 HER802 HER804 HER803 HER808 HER806 HER805
Description 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220 8 A, SILICON, RECTIFIER DIODE, TO-220

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